Plastic Encapsulated Diode Single Diode CBI MMBD4448HSDW SOT363 Package Ultra Small High Conductance
Key Attributes
Model Number:
MMBD4448HSDW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
100nA@70V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
2 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
80V
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
MMBD4448HSDW
Package:
SOT-363
Product Description
Product Overview
The MMBD4448H series are plastic-encapsulated diodes designed for general-purpose switching applications. They feature fast switching speed, ultra-small surface mount package, and high conductance. These diodes are suitable for various switching applications where quick response times and compact form factors are essential.
Product Attributes
- Brand/Manufacturer: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-363
- Device Type: Single Diode
- Molding Compound: Green molding compound device (if solid dot present), otherwise normal device.
- Pin 1 Indicator: Pin 1 indicated by solid dot.
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | @Ta=25 |
| Peak Repetitive Peak Reverse Voltage | VRRM | 80 | V | @Ta=25 |
| Working Peak Reverse Voltage | VRWM | 80 | V | @Ta=25 |
| DC Blocking Voltage | VR | 80 | V | @Ta=25 |
| RMS Reverse Voltage | VR(RMS) | 57 | V | @Ta=25 |
| Forward Continuous Current | IFM | 500 | mA | @Ta=25 |
| Average Rectified Output Current | IO | 250 | mA | @Ta=25 |
| Forward Surge Current | IFSM | 2.0 | A | @t=8.3ms, @Ta=25 |
| Power Dissipation | Pd | 200 | mW | @Ta=25 |
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | @Ta=25 |
| Storage Temperature | TSTG | -55 ~ +150 | ||
| Electrical Characteristics | ||||
| Reverse Breakdown Voltage | V(BR) | 80 | V | IR=100A |
| Forward Voltage | VF1 | 0.62 | 0.72 | V, IF=5mA |
| VF2 | 0.855 | V, IF=10mA | ||
| VF3 | 1.0 | V, IF=100mA | ||
| VF4 | 1.25 | V, IF=150mA | ||
| Reverse Current | IR1 | 100 | nA, VR=70V | |
| IR2 | 25 | nA, VR=20V | ||
| Capacitance Between Terminals | CT | 3.5 | pF, VR=0V, f=1MHz | |
| Reverse Recovery Time | trr | 4 | ns, IF=IR=10mA, Irr=0.1XIR, RL=100 | |
| Models & Marking | ||||
| Model | Marking | |||
| MMBD4448HADW | KA5 | |||
| MMBD4448HCDW | KA6 | |||
| MMBD4448HSDW | KA7 | |||
| MMBD4448HTW | KAA | |||
| MMBD4448HAQW | KAB | |||
2410121637_CBI-MMBD4448HSDW_C2919801.pdf
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