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quality Silicon Epitaxial Planar Fast Switching Diode CBI 1N4448WT in Plastic Surface Mounted SOD523 Package factory
quality Silicon Epitaxial Planar Fast Switching Diode CBI 1N4448WT in Plastic Surface Mounted SOD523 Package factory

Silicon Epitaxial Planar Fast Switching Diode CBI 1N4448WT in Plastic Surface Mounted SOD523 Package

Key Attributes
Model Number: 1N4448WT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
100nA@80V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
80V
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
125mA
Mfr. Part #:
1N4448WT
Package:
SOD-523
Product Description

Product Overview

This is a Silicon Epitaxial Planar Switching Diode, specifically a Fast Switching Diode. It is designed for applications requiring rapid switching capabilities. The diode comes in a plastic surface-mounted package (SOD-523) and is suitable for various electronic circuits.

Product Attributes

  • Type: Silicon Epitaxial Planar Switching Diode
  • Sub-Type: Fast Switching Diode
  • Package: SOD-523 (Plastic surface mounted package)
  • Marking Code: "A"
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Absolute Maximum Ratings (Ta = 25 C)

Parameter Symbol Value Unit
Peak Reverse Voltage VRM 100 V
Reverse Voltage VR 80 V
Average Rectified Forward Current IF(AV) 125 mA
Forward Continuous Current IFM 250 mA
Non-Repetitive Peak Forward Surge Current (at t = 1 s) IFSM 0.5 A
Power Dissipation Pd 150 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -65 to +150 C

Characteristics at Ta = 25 C

Parameter Symbol Min. Max. Unit
Forward Voltage at IF = 5 mA V 0.62 - V
Forward Voltage at IF = 10 mA V - 0.72 V
Forward Voltage at IF = 100 mA V - 0.855 V
Forward Voltage at IF = 150 mA V - 1 V
Forward Voltage at IF = 150 mA (additional value) V - 1.25 V
Reverse Leakage Current at VR = 80 V IR - 100 nA
Reverse Leakage Current at VR = 20 V IR - 25 nA
Reverse Leakage Current at VR = 75 V, TJ = 150 C IR - 50 A
Reverse Leakage Current at VR = 25 V, TJ = 150 C IR - 30 A
Reverse Breakdown Voltage at IR = 100 A V (BR)R 80 - V
Capacitance at VR = 0.5 V, f = 1 MHz C - 4 pF
Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 t rr - 4 ns

PIN DESCRIPTION

Pin Description
1 Cathode
2 Anode

2410121523_CBI-1N4448WT_C2919750.pdf

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