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quality Compact SOT23 package silicon planar zener diode CBI BZX84C7V5 for cellular phone circuit protection factory
quality Compact SOT23 package silicon planar zener diode CBI BZX84C7V5 for cellular phone circuit protection factory

Compact SOT23 package silicon planar zener diode CBI BZX84C7V5 for cellular phone circuit protection

Key Attributes
Model Number: BZX84C7V5
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
15Ω
Diode Configuration:
Independent
Zener Voltage(Range):
7V~7.9V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
7.5V
Mfr. Part #:
BZX84C7V5
Package:
SOT-23
Product Description

Product Overview

The BZX84CSeries Silicon Planar Zener Diodes are designed for voltage regulation in compact applications. Offered in a surface-mount SOT-23 plastic package, these diodes are ideal for high-density printed circuit boards and space-constrained devices such as cellular phones and handheld portables. They provide reliable voltage regulation with minimal space requirements.

Product Attributes

  • Package Type: SOT-23 Plastic Package

Technical Specifications

Series Zener Voltage Range (V) Nom. (V) Min. (V) Max. (V) IZT (mA) ZZT Max. () IR Max. (A) VR (V) Type Marking Code
BZX84C2V0 2.0 - 75 2 1.8 2.15 5 100 120 0.5 A8
BZX84C2V2 2.0 - 75 2.2 2.08 2.33 5 100 120 0.7 B8
BZX84C2V4 2.0 - 75 2.4 2.2 2.6 5 100 50 1 C8
BZX84C2V7 2.0 - 75 2.7 2.5 2.9 5 100 20 1 D8
BZX84C3V0 2.0 - 75 3 2.8 3.2 5 95 10 1 E8
BZX84C3V3 2.0 - 75 3.3 3.1 3.5 5 95 5 1 F8
BZX84C3V6 2.0 - 75 3.6 3.4 3.8 5 90 5 1 H8
BZX84C3V9 2.0 - 75 3.9 3.7 4.1 5 90 3 1 J8
BZX84C4V3 2.0 - 75 4.3 4 4.6 5 90 3 1 K8
BZX84C4V7 2.0 - 75 4.7 4.4 5 5 80 3 2 M8
BZX84C5V1 2.0 - 75 5.1 4.8 5.4 5 60 2 2 N8
BZX84C5V6 2.0 - 75 5.6 5.2 6 5 40 1 2 P8
BZX84C6V2 2.0 - 75 6.2 5.8 6.6 5 10 3 4 R8
BZX84C6V8 2.0 - 75 6.8 6.4 7.2 5 15 2 4 X8
BZX84C7V5 2.0 - 75 7.5 7 7.9 5 15 1 5 Y8
BZX84C8V2 2.0 - 75 8.2 7.7 8.7 5 15 0.7 5 Z8
BZX84C9V1 2.0 - 75 9.1 8.5 9.6 5 15 0.5 6 A9
BZX84C10 2.0 - 75 10 9.4 10.6 5 20 0.2 7 B9
BZX84C11 2.0 - 75 11 10.4 11.6 5 20 0.1 8 C9
BZX84C12 2.0 - 75 12 11.4 12.7 5 25 0.1 8 D9
BZX84C13 2.0 - 75 13 12.4 14.1 5 30 0.1 8 E9
BZX84C15 2.0 - 75 15 13.8 15.6 5 30 0.05 10.5 F9
BZX84C16 2.0 - 75 16 15.3 17.1 5 40 0.05 11.2 H9
BZX84C18 2.0 - 75 18 16.8 19.1 5 45 0.05 12.6 J9
BZX84C20 2.0 - 75 20 18.8 21.2 5 55 0.05 14 K9
BZX84C22 2.0 - 75 22 20.8 23.3 5 55 0.05 15.4 M9
BZX84C24 2.0 - 75 24 22.8 25.6 5 70 0.05 16.8 N9
BZX84C27 2.0 - 75 27 25.1 28.9 2 80 0.05 18.9 P9
BZX84C30 2.0 - 75 30 28 32 2 80 0.05 21 R9
BZX84C33 2.0 - 75 33 31 35 2 80 0.05 23.1 X9
BZX84C36 2.0 - 75 36 34 38 2 90 0.05 25.2 Y9
BZX84C39 2.0 - 75 39 37 41 2 130 0.05 27.3 Z9
BZX84C43 2.0 - 75 43 40 46 2 150 0.05 30.1 A0
BZX84C47 2.0 - 75 47 44 50 2 170 0.05 32.9 B0
BZX84C51 2.0 - 75 51 48 54 2 180 0.05 35.7 C0
BZX84C56 2.0 - 75 56 52 60 2 200 0.05 39.2 D0
BZX84C62 2.0 - 75 62 58 66 2 215 0.05 43.4 E0
BZX84C68 2.0 - 75 68 64 72 2 240 0.05 47.6 F0
BZX84C75 2.0 - 75 75 70 79 2 255 0.05 52.5 H0
Parameter Symbol Value Unit
Power Dissipation PD 350 mW
Thermal Resistance, Junction to Ambient RJA 417 OC/W
Junction and Storage Temperature Range Tj, Tstg -65 to +150 OC
Forward Voltage (VF < 0.9 V at IF = 10 mA) VF < 0.9 V

Note: 1) Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. Tested with pulses tp = 20 ms.


2410121234_CBI-BZX84C7V5_C2832551.pdf

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