Compact SOT563 diode CBI MMBD4448V offering fast switching speed and high conductance for electronics
Key Attributes
Model Number:
MMBD4448V
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
100nA@70V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
2 Independent
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
MMBD4448V
Package:
SOT-563
Product Description
Product Overview
The MMBD4448V is a fast switching diode designed for high-speed applications. It features fast switching speed and high conductance, making it suitable for various electronic circuits requiring efficient signal processing. The device is encapsulated in a SOT-563 plastic package.
Product Attributes
- Brand: 1 KAL
- Package Type: SOT-563
- Device Code: MMBD4448V
- Marking: KAL
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions | |
|---|---|---|---|---|---|
| Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 | |||||
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | ||
| Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | VRRM VRWM VR | 80 | V | ||
| RMS Reverse Voltage | VR(RMS) | 57 | V | ||
| Forward Continuous Current | IFM | 500 | mA | ||
| Average Rectified Output Current | IO | 250 | mA | ||
| Non-Repetitive Peak Forward Surge Current @t=8.3ms | IFSM | 2.0 | A | ||
| Power Dissipation | Pd | 150 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | ||
| Operation Junction and Storage Temperature Range | Tj,TSTG | -55~+150 | |||
| Electrical Ratings @Ta=25 | |||||
| Reverse breakdown voltage | V (BR) | 80 | V | IR=2.5 A | |
| Forward voltage | VF1 | 0.62 | 0.72 | V | IF=5mA |
| VF2 | 0.855 | V | IF=10mA | ||
| VF3 | 1.0 | V | IF=100mA | ||
| VF4 | 1.25 | V | IF=150mA | ||
| Reverse current | IR1 | 0.1 | A | VR=70V | |
| IR2 | 25 | nA | VR=20V | ||
| Capacitance between terminals | CT | 3.5 | pF | VR=6V,f=1MHz | |
| Reverse recovery time | trr | 4 | ns | IF=IR=10mA, Irr=0.1XIR,RL=100 | |
2409302301_CBI-MMBD4448V_C2836086.pdf
Related Products
Slkor BT151D-600R
Product Overview The BT151 Series are standard SCRs (Silicon Controlled Rectifiers) designed for various AC power control applications. They are suitable for use in washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation. Key Features: Sensitive Gate SCR Standard SCRs ...
Durable Slkor SL49N10G N Channel Enhancement Mode MOSFET Ideal for Motor Drivers and Power Conversion
Product OverviewThe SL49N10G is an N-Channel Enhancement Mode MOSFET featuring an advanced trench cell design for reliability and ruggedness. It is ROHS Compliant & Halogen-Free and 100% UIS and Rg Tested, making it suitable for demanding applications such as motor drivers and DC-DC converters...
power switching N Channel MOSFET Slkor SL60N06 with low on state resistance and high avalanche energy
Product OverviewThe SL60N06 is a high-performance N-Channel Power MOSFET designed for power switching applications. It features an ultra-low Rds(on) due to its high-density cell design, ensuring excellent efficiency. The device is fully characterized for avalanche voltage and current, offering good ...
High Current N Channel Superjunction MOSFET Slkor SL8N65CF with Low On Resistance and Fast Switching
Product OverviewThe SL8N65CF/SL8N65CD is an N-Channel Super-JMOSFET produced using Slkor's advanced Superjunction MOSFET technology. This technology is optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
