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quality Plastic Encapsulated Zener Diode CBI BZT52C33S Medium Current Planar Die 200mW Power Dissipation factory
quality Plastic Encapsulated Zener Diode CBI BZT52C33S Medium Current Planar Die 200mW Power Dissipation factory

Plastic Encapsulated Zener Diode CBI BZT52C33S Medium Current Planar Die 200mW Power Dissipation

Key Attributes
Model Number: BZT52C33S
Product Custom Attributes
Mfr. Part #:
BZT52C33S
Package:
SOD-323
Product Description

Product Overview

The SOD-323 Plastic-Encapsulated Zener Diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. Featuring a planar die construction and 200mW power dissipation on a ceramic PBC, these diodes offer reliable performance. They are available in a lead-free version.

Product Attributes

  • Construction: Planar die
  • Packaging: Plastic-Encapsulated
  • Assembly: Ideally suited for automated assembly processes
  • Availability: Lead-free version available
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Type Marking Code Zener Voltage Range (Vznom) @ IZT (mA) Max. Dynamic Impedance (ZZT @ IZT) () Max. Dynamic Impedance (ZZK @ IZK) () Max. Reverse Leakage Current (IR @ VR) (A) Forward Voltage (VF @ IF = 10mA) (V) Power Dissipation (PD) (mW) Thermal Resistance (RJA) (/W) Junction Temperature (Tj) () Storage Temperature Range (Tstg) ()
BZT52C2V4S MH 2.4 (2.2...2.6) @ 5mA 100 600 50 @ 1V 0.9 200 625 150 -55~+150
BZT52C2V7S MJ 2.7 (2.5...2.9) @ 5mA 100 600 20 @ 1V 0.9 200 625 150 -55~+150
BZT52C3V0S MK 3.0 (2.8...3.2) @ 5mA 95 600 10 @ 1V 0.9 200 625 150 -55~+150
BZT52C3V3S MM 3.3 (3.1...3.5) @ 5mA 95 600 5 @ 1V 0.9 200 625 150 -55~+150
BZT52C3V6S MN 3.6 (3.4...3.8) @ 5mA 90 600 5 @ 1V 0.9 200 625 150 -55~+150
BZT52C3V9S MP 3.9 (3.7...4.1) @ 5mA 90 600 3 @ 1V 0.9 200 625 150 -55~+150
BZT52C4V3S MR 4.3 (4...4.6) @ 5mA 90 600 3 @ 1V 0.9 200 625 150 -55~+150
BZT52C4V7S MX 4.7 (4.4...5) @ 5mA 80 500 3 @ 1V 0.9 200 625 150 -55~+150
BZT52C5V1S MY 5.1 (4.8...5.4) @ 5mA 60 480 2 @ 1V 0.9 200 625 150 -55~+150
BZT52C5V6S MZ 5.6 (5.2...6) @ 5mA 40 400 1 @ 1V 0.9 200 625 150 -55~+150
BZT52C6V2S NA 6.2 (5.8...6.6) @ 5mA 10 150 3 @ 1V 0.9 200 625 150 -55~+150
BZT52C6V8S NB 6.8 (6.4...7.2) @ 5mA 15 80 2 @ 1V 0.9 200 625 150 -55~+150
BZT52C7V5S NC 7.5 (7...7.9) @ 5mA 15 80 1 @ 1V 0.9 200 625 150 -55~+150
BZT52C8V2S ND 8.2 (7.7...8.7) @ 5mA 15 80 0.7 @ 1V 0.9 200 625 150 -55~+150
BZT52C9V1S NE 9.1 (8.5...9.6) @ 5mA 15 100 0.5 @ 1V 0.9 200 625 150 -55~+150
BZT52C10S NF 10 (9.4...10.6) @ 5mA 20 150 0.2 @ 1V 0.9 200 625 150 -55~+150
BZT52C11S NH 11 (10.4...11.6) @ 5mA 20 150 0.1 @ 1V 0.9 200 625 150 -55~+150
BZT52C12S NJ 12 (11.4...12.7) @ 5mA 25 150 0.1 @ 1V 0.9 200 625 150 -55~+150
BZT52C13S NK 13 (12.4...14.1) @ 5mA 30 170 0.1 @ 1V 0.9 200 625 150 -55~+150
BZT52C15S NM 15 (13.8...15.6) @ 5mA 30 200 0.1 @ 1V 0.9 200 625 150 -55~+150
BZT52C16S NN 16 (15.3...17.1) @ 5mA 40 200 0.1 @ 1V 0.9 200 625 150 -55~+150
BZT52C18S NP 18 (16.8...19.1) @ 5mA 45 225 0.1 @ 1V 0.9 200 625 150 -55~+150
BZT52C20S NR 20 (18.8...21.2) @ 5mA 55 225 0.1 @ 1V 0.9 200 625 150 -55~+150
BZT52C22S NX 22 (20.8...23.3) @ 5mA 55 250 0.1 @ 1V 0.9 200 625 150 -55~+150
BZT52C24S NY 24 (22.8...25.6) @ 5mA 70 250 0.1 @ 1V 0.9 200 625 150 -55~+150
BZT52C27S NZ 27 (25.1...28.9) @ 2mA 80 300 0.1 @ 0.5V 0.9 200 625 150 -55~+150
BZT52C30S PA 30 (28...32) @ 2mA 80 300 0.1 @ 0.5V 0.9 200 625 150 -55~+150
BZT52C33S PB 33 (31...35) @ 2mA 80 325 0.1 @ 0.5V 0.9 200 625 150 -55~+150
BZT52C36S PC 36 (34...38) @ 2mA 90 350 0.1 @ 0.5V 0.9 200 625 150 -55~+150
BZT52C39S PD 39 (37...41) @ 2mA 130 350 0.1 @ 0.5V 0.9 200 625 150 -55~+150
BZT52C43S 6A 43 (40...46) @ 2.5mA 130 500 2 @ 1V 0.9 200 625 150 -55~+150
BZT52C47S 6B 47 (44...50) @ 2.5mA 150 500 2 @ 1V 0.9 200 625 150 -55~+150
BZT52C51S 6C 51 (48...54) @ 2.5mA 180 500 1 @ 1V 0.9 200 625 150 -55~+150
BZT52C56S 6D 56 (52...60) @ 2.5mA 180 500 1 @ 1V 0.9 200 625 150 -55~+150
BZT52C62S 6E 62 (58...66) @ 2.5mA 200 500 0.2 @ 1V 0.9 200 625 150 -55~+150
BZT52C68S 6F 68 (64...72) @ 2.5mA 250 500 0.2 @ 1V 0.9 200 625 150 -55~+150
BZT52C75S 6H 75 (70...79) @ 2.5mA 300 500 0.2 @ 1V 0.9 200 625 150 -55~+150

Note 1: PD is defined as the power dissipation on ceramic PCB.

Note 2: VF is tested with pulses (20 ms).


2510101615_CBI-BZT52C33S_C51315194.pdf

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