Medium Current Zener Diode Planar Die Construction Plastic Encapsulated SOD323 Package CBI BZT52C10S
Product Overview
The SOD-323 Plastic-Encapsulated Zener Diodes are general-purpose, medium-current diodes designed for automated assembly processes. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for a wide range of applications requiring stable voltage reference. Available in a lead-free version.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOD-323
- Construction: Planar die
- Encapsulation: Plastic
- Lead Free: Available
Technical Specifications
| Characteristic | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Forward Voltage | VF | 0.9 | V | @ IF = 10mA |
| Power Dissipation | PD | 200 | mW | on ceramic PCB |
| Thermal Resistance Junction to Ambient | RJA | 625 | /W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55~+150 |
Electrical Characteristics
| TYPE | Marking | Nominal Zener Voltage (VZ@IZT) | Min Zener Voltage | Max Zener Voltage | Test Current (IZT) | Maximum Zener Impedance (ZZT@IZK) | Maximum Reverse Current (IZK) | Typical Temperature Coefficient (@IZTC) | Reverse Current (IR @ VR) | Unit |
|---|---|---|---|---|---|---|---|---|---|---|
| BZT52C2V4S | WX | 2.4 | 2.20 | 2.60 | 5 | 600 | 1.0 | -3.5 | 50 | A |
| BZT52C2V7S | W1 | 2.7 | 2.5 | 2.9 | 5 | 600 | 1.0 | -3.5 | 20 | A |
| BZT52C3V0S | W2 | 3.0 | 2.8 | 3.2 | 5 | 600 | 1.0 | -3.5 | 10 | A |
| BZT52C3V3S | W3 | 3.3 | 3.1 | 3.5 | 5 | 600 | 1.0 | -3.5 | 5 | A |
| BZT52C3V6S | W4 | 3.6 | 3.4 | 3.8 | 5 | 600 | 1.0 | -3.5 | 5 | A |
| BZT52C3V9S | W5 | 3.9 | 3.7 | 4.1 | 5 | 600 | 1.0 | -3.5 | 3 | A |
| BZT52C4V3S | W6 | 4.3 | 4.0 | 4.6 | 5 | 600 | 1.0 | -3.5 | 3 | A |
| BZT52C4V7S | W7 | 4.7 | 4.4 | 5.0 | 5 | 500 | 1.0 | -3.5 | 5 | A |
| BZT52C5V1S | W8 | 5.1 | 4.8 | 5.4 | 5 | 480 | 1.0 | -2.7 | 2 | A |
| BZT52C5V6S | W9 | 5.6 | 5.2 | 6.0 | 5 | 400 | 1.0 | -2 | 1 | A |
| BZT52C6V2S | WA | 6.2 | 5.8 | 6.6 | 5 | 150 | 1.0 | 0.4 | 3 | A |
| BZT52C6V8S | WB | 6.8 | 6.4 | 7.2 | 5 | 80 | 1.0 | 1.2 | 2 | A |
| BZT52C7V5S | WC | 7.5 | 7.0 | 7.9 | 5 | 80 | 1.0 | 2.5 | 1 | A |
| BZT52C8V2S | WD | 8.2 | 7.7 | 8.7 | 5 | 80 | 1.0 | 3.2 | 0.7 | A |
| BZT52C9V1S | WE | 9.1 | 8.5 | 9.6 | 5 | 100 | 1.0 | 3.8 | 0.5 | A |
| BZT52C10S | WF | 10 | 9.4 | 10.6 | 5 | 150 | 1.0 | 4.5 | 0.2 | A |
| BZT52C11S | WG | 11 | 10.4 | 11.6 | 5 | 150 | 1.0 | 5.4 | 0.1 | A |
| BZT52C12S | WH | 12 | 11.4 | 12.7 | 5 | 150 | 1.0 | 6.0 | 0.1 | A |
| BZT52C13S | WI | 13 | 12.4 | 14.1 | 5 | 170 | 1.0 | 7.0 | 0.1 | A |
| BZT52C15S | WJ | 15 | 13.8 | 15.6 | 5 | 200 | 1.0 | 9.2 | 0.1 | A |
| BZT52C16S | WK | 16 | 15.3 | 17.1 | 5 | 200 | 1.0 | 10.4 | 0.1 | A |
| BZT52C18S | WL | 18 | 16.8 | 19.1 | 5 | 225 | 1.0 | 12.4 | 0.1 | A |
| BZT52C20S | WM | 20 | 18.8 | 21.2 | 5 | 225 | 1.0 | 14.4 | 0.1 | A |
| BZT52C22S | WN | 22 | 20.8 | 23.3 | 5 | 250 | 1.0 | 16.4 | 0.1 | A |
| BZT52C24S | WO | 24 | 22.8 | 25.6 | 5 | 250 | 1.0 | 18.4 | 0.1 | A |
| BZT52C27S | WP | 27 | 25.1 | 28.9 | 2 | 300 | 0.5 | 21.4 | 0.1 | A |
| BZT52C30S | WQ | 30 | 28.0 | 32.0 | 2 | 300 | 0.5 | 24.4 | 0.1 | A |
| BZT52C33S | WR | 33 | 31.0 | 35.0 | 2 | 325 | 0.5 | 27.4 | 0.1 | A |
| BZT52C36S | WS | 36 | 34.0 | 38.0 | 2 | 350 | 0.5 | 30.4 | 0.1 | A |
| BZT52C39S | WT | 39 | 37.0 | 41.0 | 2 | 350 | 0.5 | 33.4 | 0.1 | A |
Notes:
- 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
- 2. Short duration test pulse used to minimize self-heating effect.
- 3. f = 1kHz.
Package Outline
| Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|
| A | 0.95 | 1.15 | |
| A1 | 0.010 | 0.100 | |
| B | 1.20 | 1.40 | |
| bp | 0.25 | 0.40 | |
| C | 0.09 | 0.150 | |
| E | 1.60 | 1.80 | |
| HE | 2.30 | 2.70 | |
| Lp | 0.20 | 0.40 | |
| 0 | 5 |
PINNING:
- 1: Cathode
- 2: Anode
Simplified outline: SOD-323
2410121521_CBI-BZT52C10S_C21714238.pdf
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