Medium Current Zener Diode Planar Die Construction Plastic Encapsulated SOD323 Package CBI BZT52C10S

Key Attributes
Model Number: BZT52C10S
Product Custom Attributes
Impedance(Zzt):
20Ω
Pd - Power Dissipation:
200mW
Zener Voltage(Range):
9.4V~10.6V
Zener Voltage(Nom):
10V
Impedance(Zzk):
150Ω
Mfr. Part #:
BZT52C10S
Package:
SOD-323
Product Description

Product Overview

The SOD-323 Plastic-Encapsulated Zener Diodes are general-purpose, medium-current diodes designed for automated assembly processes. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for a wide range of applications requiring stable voltage reference. Available in a lead-free version.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOD-323
  • Construction: Planar die
  • Encapsulation: Plastic
  • Lead Free: Available

Technical Specifications

Characteristic Symbol Value Unit Notes
Forward Voltage VF 0.9 V @ IF = 10mA
Power Dissipation PD 200 mW on ceramic PCB
Thermal Resistance Junction to Ambient RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~+150

Electrical Characteristics

TYPE Marking Nominal Zener Voltage (VZ@IZT) Min Zener Voltage Max Zener Voltage Test Current (IZT) Maximum Zener Impedance (ZZT@IZK) Maximum Reverse Current (IZK) Typical Temperature Coefficient (@IZTC) Reverse Current (IR @ VR) Unit
BZT52C2V4S WX 2.4 2.20 2.60 5 600 1.0 -3.5 50 A
BZT52C2V7S W1 2.7 2.5 2.9 5 600 1.0 -3.5 20 A
BZT52C3V0S W2 3.0 2.8 3.2 5 600 1.0 -3.5 10 A
BZT52C3V3S W3 3.3 3.1 3.5 5 600 1.0 -3.5 5 A
BZT52C3V6S W4 3.6 3.4 3.8 5 600 1.0 -3.5 5 A
BZT52C3V9S W5 3.9 3.7 4.1 5 600 1.0 -3.5 3 A
BZT52C4V3S W6 4.3 4.0 4.6 5 600 1.0 -3.5 3 A
BZT52C4V7S W7 4.7 4.4 5.0 5 500 1.0 -3.5 5 A
BZT52C5V1S W8 5.1 4.8 5.4 5 480 1.0 -2.7 2 A
BZT52C5V6S W9 5.6 5.2 6.0 5 400 1.0 -2 1 A
BZT52C6V2S WA 6.2 5.8 6.6 5 150 1.0 0.4 3 A
BZT52C6V8S WB 6.8 6.4 7.2 5 80 1.0 1.2 2 A
BZT52C7V5S WC 7.5 7.0 7.9 5 80 1.0 2.5 1 A
BZT52C8V2S WD 8.2 7.7 8.7 5 80 1.0 3.2 0.7 A
BZT52C9V1S WE 9.1 8.5 9.6 5 100 1.0 3.8 0.5 A
BZT52C10S WF 10 9.4 10.6 5 150 1.0 4.5 0.2 A
BZT52C11S WG 11 10.4 11.6 5 150 1.0 5.4 0.1 A
BZT52C12S WH 12 11.4 12.7 5 150 1.0 6.0 0.1 A
BZT52C13S WI 13 12.4 14.1 5 170 1.0 7.0 0.1 A
BZT52C15S WJ 15 13.8 15.6 5 200 1.0 9.2 0.1 A
BZT52C16S WK 16 15.3 17.1 5 200 1.0 10.4 0.1 A
BZT52C18S WL 18 16.8 19.1 5 225 1.0 12.4 0.1 A
BZT52C20S WM 20 18.8 21.2 5 225 1.0 14.4 0.1 A
BZT52C22S WN 22 20.8 23.3 5 250 1.0 16.4 0.1 A
BZT52C24S WO 24 22.8 25.6 5 250 1.0 18.4 0.1 A
BZT52C27S WP 27 25.1 28.9 2 300 0.5 21.4 0.1 A
BZT52C30S WQ 30 28.0 32.0 2 300 0.5 24.4 0.1 A
BZT52C33S WR 33 31.0 35.0 2 325 0.5 27.4 0.1 A
BZT52C36S WS 36 34.0 38.0 2 350 0.5 30.4 0.1 A
BZT52C39S WT 39 37.0 41.0 2 350 0.5 33.4 0.1 A

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.

Package Outline

Symbol Dimension in Millimeters Min Max
A 0.95 1.15
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.40
C 0.09 0.150
E 1.60 1.80
HE 2.30 2.70
Lp 0.20 0.40
0 5

PINNING:

  • 1: Cathode
  • 2: Anode

Simplified outline: SOD-323


2410121521_CBI-BZT52C10S_C21714238.pdf

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