Medium Current Zener Diode CBI BZT52B9V1 Planar Die 350mW Power Dissipation Automated Assembly

Key Attributes
Model Number: BZT52B9V1
Product Custom Attributes
Impedance(Zzt):
15Ω
Zener Voltage(Range):
8.92V~9.28V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
9.1V
Impedance(Zzk):
100Ω
Mfr. Part #:
BZT52B9V1
Package:
SOD-123
Product Description

Product Overview

This Zener Diode features a planar die construction and 350mW power dissipation on a ceramic PCB. It is designed for general purpose, medium current applications and is ideally suited for automated assembly processes. Lead-free versions are available.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Construction: Planar Die
  • Packaging: Plastic-Encapsulate Diodes, SOD-123
  • Availability: Lead Free Version

Technical Specifications

Type Number Type Code Zener Voltage Range (Note 2) Nom(V) Zener Voltage Range (Note 2) Min(V) Zener Voltage Range (Note 2) Max(V) Test Current IZT (mA) Maximum Zener Impedance ZZT@IZT () Maximum Reverse Current IZK (A) Typical Temperature Coefficent @IZTC (mV/C) Forward Voltage (Note 2) @ IF = 10mA (V) Power Dissipation (Note 1) (mW) Thermal Resistance from Junction to Ambient (RJA) (/W) Junction Temperature (Tj) () Storage Temperature Range (Tstg) ()
BZT52B2V4 2WX 2.4 2.35 2.45 5 100 600 1.0 -3.5 350 357 150 -55 ~ +150
BZT52B2V7 2W1 2.7 2.65 2.75 5 100 600 1.0 -3.5 350 357 150 -55 ~ +150
BZT52B3V0 2W2 3.0 2.94 3.06 5 95 600 1.0 -3.5 350 357 150 -55 ~ +150
BZT52B3V3 2W3 3.3 3.23 3.37 5 95 600 1.0 -3.5 350 357 150 -55 ~ +150
BZT52B3V6 2W4 3.6 3.53 3.67 5 90 600 1.0 -3.5 350 357 150 -55 ~ +150
BZT52B3V9 2W5 3.9 3.82 3.98 5 90 600 1.0 -3.5 350 357 150 -55 ~ +150
BZT52B4V3 2W6 4.3 4.21 4.39 5 90 600 1.0 -3.5 350 357 150 -55 ~ +150
BZT52B4V7 2W7 4.7 4.61 4.79 5 80 500 1.0 -3.5 350 357 150 -55 ~ +150
BZT52B5V1 2W8 5.1 5.00 5.20 5 60 480 1.0 -2.7 350 357 150 -55 ~ +150
BZT52B5V6 2W9 5.6 5.49 5.71 5 40 400 1.0 -2.0 350 357 150 -55 ~ +150
BZT52B6V2 2WA 6.2 6.08 6.32 5 10 150 1.0 0.4 350 357 150 -55 ~ +150
BZT52B6V8 2WB 6.8 6.66 6.94 5 15 80 1.0 1.2 350 357 150 -55 ~ +150
BZT52B7V5 2WC 7.5 7.35 7.65 5 15 80 1.0 2.5 350 357 150 -55 ~ +150
BZT52B8V2 2WD 8.2 8.04 8.36 5 15 80 1.0 3.2 350 357 150 -55 ~ +150
BZT52B9V1 2WE 9.1 8.92 9.28 5 15 100 1.0 3.8 350 357 150 -55 ~ +150
BZT52B10 2WF 10 9.80 10.20 5 20 150 1.0 4.5 350 357 150 -55 ~ +150
BZT52B11 2WG 11 10.78 11.22 5 20 150 1.0 5.4 350 357 150 -55 ~ +150
BZT52B12 2WH 12 11.76 12.24 5 25 150 1.0 6.0 350 357 150 -55 ~ +150
BZT52B13 2WI 13 12.74 13.26 5 30 170 1.0 7.0 350 357 150 -55 ~ +150
BZT52B15 2WJ 15 14.70 15.30 5 30 200 1.0 9.2 350 357 150 -55 ~ +150
BZT52B16 2WK 16 15.68 16.32 5 40 200 1.0 10.4 350 357 150 -55 ~ +150
BZT52B18 2WL 18 17.64 18.36 5 45 225 1.0 12.4 350 357 150 -55 ~ +150
BZT52B20 2WM 20 19.60 20.40 5 55 225 1.0 14.4 350 357 150 -55 ~ +150
BZT52B22 2WN 22 21.56 22.44 5 55 250 1.0 16.4 350 357 150 -55 ~ +150
BZT52B24 2WO 24 23.52 24.48 5 70 250 1.0 18.4 350 357 150 -55 ~ +150
BZT52B27 2WP 27 26.46 27.54 2 80 300 0.5 21.4 350 357 150 -55 ~ +150
BZT52B30 2WQ 30 29.40 30.60 2 80 300 0.5 24.4 350 357 150 -55 ~ +150
BZT52B33 2WR 33 32.34 33.66 2 80 325 0.5 27.4 350 357 150 -55 ~ +150
BZT52B36 2WS 36 35.28 36.72 2 90 350 0.5 30.4 350 357 150 -55 ~ +150
BZT52B39 2WT 39 38.22 39.78 2 130 350 0.5 33.4 350 357 150 -55 ~ +150
BZT52B43 2WU 43 41.16 42.84 2 130 350 0.5 36.4 350 357 150 -55 ~ +150

Package Outline (SOD-123)

Symbol Dimension in Millimeters (Min) Dimension in Millimeters (Max)
A 0.95 1.15
A1 0.01 0.100
B 1.55 1.65
bp 0.50 0.70
C 0.09 0.150
E 2.60 2.70
HE 3.45 3.85
Lp 0.20 0.45
0 5

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.

2410121340_CBI-BZT52B9V1_C21714221.pdf

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