Schottky Diode 1A CBI 1N5817WS SOD323 Package Low Forward Voltage for Power Supply and Rectification
Key Attributes
Model Number:
1N5817WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
1mA@20V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
20V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
750mV@3A
Current - Rectified:
1A
Mfr. Part #:
1N5817WS
Package:
SOD-323
Product Description
Product Overview
The 1N5817WS~1N5819WS series are 1A surface mount Schottky barrier diodes designed for various electronic applications. These diodes offer efficient rectification with low forward voltage drop characteristics. They are suitable for power supply circuits, switching applications, and general-purpose rectification where high efficiency and low power loss are critical.
Product Attributes
- Package Type: SOD-323
- Marking Code: SJ (1N5817WS), SL (1N5818/5819WS)
Technical Specifications
| Parameter | Symbol | 1N5817WS | 1N5818WS | 1N5819WS | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||
| Reverse Voltage | VR | 20 | 30 | 40 | V |
| Average Forward Rectified Current | IF(AV) | 1 | A | ||
| Non-Repetitive Peak Forward Surge Current (t = 8.3 ms) | IFSM | 9 | A | ||
| Power Dissipation | Ptot | 450 | mW | ||
| Operating Temperature Range | Tj | -55 to +125 | C | ||
| Storage Temperature Range | Tstg | -55 to +125 | C | ||
| Characteristics at Ta = 25 C | |||||
| Reverse Breakdown Voltage at IR = 1 mA | V(BR)R | 20 | 30 | 40 | V |
| Forward Voltage at IF = 1 A | VF | - | - | - | V |
| 0.45 | 0.55 | 0.6 | |||
| Forward Voltage at IF = 3 A | VF | - | - | - | V |
| 0.75 | 0.875 | 0.9 | |||
| Reverse Voltage Leakage Current at VR = 20 V | IR | 1 | - | - | mA |
| Reverse Voltage Leakage Current at VR = 30 V | IR | - | 1 | - | mA |
| Reverse Voltage Leakage Current at VR = 40 V | IR | - | - | 1 | mA |
| Total Capacitance at VR = 4 V, f = 1 MHz | Ctot | 120 | pF | ||
PINNING
1 PIN: Cathode
2 PIN: Anode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-323
2410121234_CBI-1N5817WS_C2828424.pdf
Related Products
Slkor SL15T65FF
Product Overview Features: High ruggedness for motor control, VCE(sat) positive temperature coefficient, very soft, fast recovery anti-parallel diode, low EMI, maximum junction temperature 175C. Applications: Inverter for motor control. Package Types TO-220F TO-220 TO-263 Parameter Symbol Conditions ...
power management dual N Channel TrenchFET Power MOSFET Slkor SL6800C with low gate charge and robust design
Product OverviewThe SL6800C is a dual N-Channel TrenchFET Power MOSFET designed for efficient power management. It features low gate charge and low on-resistance, making it suitable for various surface-mount applications. Its robust design ensures reliable performance with high current handling ...
Power MOSFET Slkor SL0G50A 60V 50A with low on resistance high avalanche energy and thermal performance
Product OverviewThis 60V/50A N-Channel MOSFET, model SL0G50A, features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and good stability with high EAS. Its excellent package ensures good heat dissipation, making it suitable for power switching ...
Power Electronics N Channel MOSFET Slkor SL90N20P with Fast Switching and Avalanche Tested Reliability
Product OverviewThis N-Channel MOSFET offers fast switching, 100% avalanche tested performance, and improved dv/dt capability. It is designed for high-power applications including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
