Low RDSon N channel MOSFET CBI 2N7002KDW designed for load switch and DC DC converter applications
Key Attributes
Model Number:
2N7002KDW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
5.3Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
2 N-Channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002KDW
Package:
SOT-363
Product Description
Product Overview
This N-channel MOSFET features a high-density cell design for low RDS(on), making it suitable as a voltage-controlled small signal switch. It offers rugged reliability and high saturation current capability, with ESD protection. Ideal applications include load switches for portable devices and DC/DC converters.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-363
- Construction: Plastic-Encapsulate MOSFET
- Channel Type: N-channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C unless otherwise noted) | ||||||
| Drain-Source voltage | VDS | 60 | V | |||
| Drain Current | ID | 300 | mA | |||
| Power Dissipation | PD | 0.15 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 833 | /W | |||
| Gate-Source voltage | VGS | 20 | V | |||
| Static Characteristics (Ta = 25C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0V, ID =250A | 60 | V | ||
| Gate Threshold Voltage* | VGS(th) | VDS =VGS, ID =1mA | 1 | 1.3 | 2.5 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS =48V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS1 | VGS =20V, VDS = 0V | 10 | A | ||
| Drain-Source On-Resistance* | RDS(on) | VGS = 4.5V, ID =200mA | 1.1 | 5.3 | ||
| VGS =10V,ID =500mA | 0.9 | 5 | ||||
| Diode Forward Voltage | VSD | VGS=0V, IS=300mA | 1.5 | V | ||
| Recovered charge | Qr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s | 30 | nC | ||
| Dynamic Characteristics** | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | 30 | pF | |||
| Reverse Transfer Capacitance | Crss | 10 | pF | |||
| Switching Characteristics** | ||||||
| Turn-On Delay Time | td(on) | VGS=10V,VDD=50V,RG=50, RGS=50, RL=250 | 10 | ns | ||
| Turn-Off Delay Time | td(off) | 15 | ns | |||
| Reverse recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s | 30 | ns | ||
| Gate-Source Breakdown Voltage | BVGSO | Igs=1mA (Open Drain) | 21.5 | 30 | V | |
Notes: *Pulse Test: Pulse Width 300s, Duty Cycle 2%. **These parameters have no way to verify.
2410121653_CBI-2N7002KDW_C2919800.pdf
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