N Channel MOSFET CBI BSS123W Voltage Controlled Switch with High Breakdown Voltage in SOT 323 Package
Key Attributes
Model Number:
BSS123W
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170mA
RDS(on):
10Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Output Capacitance(Coss):
15pF
Pd - Power Dissipation:
250mW
Input Capacitance(Ciss):
60pF
Gate Charge(Qg):
2nC@10V
Mfr. Part #:
BSS123W
Package:
SOT-323
Product Description
Product Overview
This N-Channel MOSFET, housed in a SOT-323 surface mount package, is designed for high-density cell applications, offering extremely low RDS(ON). It functions as a voltage-controlled small signal switch, providing a rugged and reliable solution for various applications including small servo motor controls, power MOSFET gate drivers, and general switching applications. Its key features include a high breakdown voltage and efficient on-resistance characteristics.
Product Attributes
- Package Type: SOT-323
- Material: Plastic Encapsulated
- Channel Type: N Channel
- Control Type: Voltage Controlled
- Brand: Heyuan China Base Electronics Technology Co., Ltd. (Implied from copyright)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (note 1) | ID | 0.17 | A | |||
| Pulsed Drain Current (tp=10us) | IDM | 0.68 | A | |||
| Continuous Source-Drain Diode Current | IS | 0.17 | A | |||
| Power Dissipation | PD | 0.25 | W | |||
| Thermal Resistance from Junction to Ambient (note 1) | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Lead Temperature for Soldering Purposes(1/8 from case for 10 s) | TL | 260 | ||||
| STATIC CHARACTERISTICS (T =25 unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =100V,VGS = 0V | 1 | µA | ||
| IDSS | VDS =20V,VGS = 0V | 10 | nA | |||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±50 | nA | ||
| Gate threshold voltage (note 2) | VGS(th) | VDS =VGS, ID =250µA | 1 | 1.6 | 2.8 | V |
| Drain-source on-resistance(note 2) | RDS(on) | VGS =4.5V, ID =0.17A | 3.8 | 10 | Ω | |
| RDS(on) | VGS =10V, ID =0.17A | 3.5 | 6 | Ω | ||
| Forward tranconductance(note 2) | gFS | VDS =10V, ID =170mA | 80 | mS | ||
| Diode forward voltage | VSD | IS=340mA, VGS = 0V | 1.3 | V | ||
| DYNAMIC CHARACTERISTICS (note 4) | ||||||
| Input Capacitance | Ciss | VDS =25V,VGS =0V,f =1MHz | 29 | 60 | pF | |
| Output Capacitance | Coss | 10 | 15 | pF | ||
| Reverse Transfer Capacitance | Crss | 2 | 6 | pF | ||
| SWITCHING CHARACTERISTICS (note 3,4) | ||||||
| Turn-on delay time | td(on) | VGS=10V,VDD=30V, ID=0.28A,RGEN=50Ω | 8 | ns | ||
| Turn-on rise time | tr | 8 | ns | |||
| Turn-off delay time | td(off) | 13 | ns | |||
| Turn-off fall time | tf | 16 | ns | |||
| Total Gate Charge | Qg | VDS=10V,ID=0.22A, VGS=10V | 1.4 | 2 | nC | |
| Gate-Source Charge | Qgs | 0.15 | 0.25 | nC | ||
| Gate-Drain Charge | Qgd | 0.2 | 0.4 | nC | ||
| MARKING | ||||||
| Equivalent Circuit | 1. GATE, 2. SOURCE, 3. DRAIN | |||||
| V(BR)DSS | 100V | |||||
| RDS(on)MAX | 6Ω@10V, 10Ω@4.5V | |||||
| ID | 0.17A | |||||
| PACKAGE OUTLINE | ||||||
| Symbol | Dimension in Millimeters | Min | Max | |||
| A | 0.90 | 1.00 | ||||
| A1 | 0.010 | 0.100 | ||||
| B | 1.20 | 1.40 | ||||
| bp | 0.25 | 0.45 | ||||
| C | 0.09 | 0.15 | ||||
| D | 2.00 | 2.20 | ||||
| E | 1.15 | 1.35 | ||||
| HE | 2.15 | 2.55 | ||||
| Lp | 0.25 | 0.46 | ||||
| θ | 0º | 6º | ||||
2410121501_CBI-BSS123W_C21714181.pdf
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