P Channel Enhancement Mode Field Effect Transistor CBI BC3407 with Low Gate Charge and SOT 23 Package
Key Attributes
Model Number:
BC3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
87mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Input Capacitance(Ciss):
700pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
BC3407
Package:
SOT-23
Product Description
Product Overview
The BC3407 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for use as a load switch or in PWM applications. This SOT-23 encapsulated MOSFET is designed for efficient power management.
Product Attributes
- Type: P-Channel Enhancement Mode Field Effect Transistor
- Package: SOT-23 Plastic-Encapsulate
- Marking: 3407
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -4.1 | A | |||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance from Junction to Ambient | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta=25 unless otherwise noted) | ||||||
| Drain-source breakdown voltage | BVDSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V,VGS = 0V | -1 | A | ||
| Gate-source leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-4.1A (note 1) | 60 | m | ||
| VGS =-4.5V, ID =-3A (note 1) | 87 | m | ||||
| Forward tranconductance | gFS | VDS =-5V, ID =-4A (note 1) | 5.5 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1 | -3 | V | |
| Diode forward voltage | VSD | IS=-1A,VGS=0V (note 1) | -1 | V | ||
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V,f =1MHz | 700 | pF | ||
| Output capacitance | Coss | 120 | pF | |||
| Reverse transfer capacitance | Crss | 75 | pF | |||
| Switching Characteristics (note 2) | ||||||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=3 | 8.6 | ns | ||
| Turn-on rise time | tr | 5.0 | ns | |||
| Turn-off delay time | td(off) | 28.2 | ns | |||
| Turn-off fall time | tf | 13.5 | ns | |||
Notes:
- 1. Pulse test: Pulse width 300s, duty cycle 2%.
- 2. These parameters have no way to verify.
2410121455_CBI-BC3407_C2928247.pdf
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