50 Volt Drain Source Voltage Plastic Encapsulate N Channel MOSFET CBI BSS138W for Battery Operated Systems
Key Attributes
Model Number:
BSS138W
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
RDS(on):
3.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
27pF
Pd - Power Dissipation:
300mW
Mfr. Part #:
BSS138W
Package:
SOT-323
Product Description
Product Overview
This N-Channel, Plastic-Encapsulate MOSFET offers a 50-V Drain-Source Voltage and features a high-density cell design for extremely low RDS(on). It is rugged and reliable, designed for direct logic-level interface with TTL/CMOS drivers. Applications include driving relays, solenoids, lamps, hammers, displays, memories, transistors, battery-operated systems, and solid-state relays. Key electrical characteristics include a V(BR)DSS of 50V, RDS(on)MAX of 3.5 at 10V (220mA), and 6 at 4.5V (220mA).
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Material: Plastic-Encapsulate
- Package Type: SOT-323
- Channel Type: N-Channel
- Interface: Direct Logic-Level Interface (TTL/CMOS)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 50 | V | |||
| Continuous Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 0.22 | A | |||
| Power Dissipation | PD | 0.3 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 417 | /W | |||
| Operating Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 | |||
| Off Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 50 | V | ||
| Gate-body leakage | IGSS | VDS =0V, VGS =20V | 500 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =50V, VGS =0V | 0.5 | A | ||
| VDS =30V, VGS =0V | 100 | nA | ||||
| On Characteristics (note 1) | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =1mA | 0.80 | 1.50 | V | |
| Static drain-source on-resistance | RDS(on) | VGS =10V, ID =0.22A | 3.50 | |||
| VGS =4.5V, ID =0.22A | 6 | |||||
| Forward transconductance | gFS | VDS =10V, ID =0.22A | 0.12 | S | ||
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f=1MHz | 27 | pF | ||
| Output capacitance | Coss | 13 | pF | |||
| Reverse transfer capacitance | Crss | 6 | pF | |||
| Switching Characteristics (note 1,2) | ||||||
| Turn-on delay time | td(on) | VDD=30V, VDS=10V, ID =0.29A,RGEN=6 | 5 | ns | ||
| Rise time | tr | 18 | ns | |||
| Turn-off delay time | td(off) | 36 | ns | |||
| Fall time | tf | 14 | ns | |||
| Drain-source body diode Characteristics (note 1) | ||||||
| Body diode forward voltage | VSD | IS=0.44A, VGS = 0V | 1.4 | V | ||
| Package Outline (SOT-323) | ||||||
| Symbol | Dimension in Millimeters | Min | Max | |||
| A | 0.90 | 1.00 | ||||
| A1 | 0.010 | 0.100 | ||||
| B | 1.20 | 1.40 | ||||
| bp | 0.25 | 0.45 | ||||
| C | 0.09 | 0.15 | ||||
| D | 2.00 | 2.20 | ||||
| E | 1.15 | 1.35 | ||||
| HE | 2.15 | 2.55 | ||||
| Lp | 0.25 | 0.46 | ||||
| 0 | 6 | |||||
2410121331_CBI-BSS138W_C21714193.pdf
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