N channel MOSFET CBI 2SK3018 designed for low voltage drive and fast switching portable applications
Key Attributes
Model Number:
2SK3018
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
13Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
13pF
Gate Charge(Qg):
-
Mfr. Part #:
2SK3018
Package:
SOT-23
Product Description
Product Overview
This N-channel MOSFET offers low on-resistance and fast switching speeds, making it ideal for portable equipment due to its low voltage drive capability. The design facilitates easy drive circuit implementation and parallel connection. Marking is KN.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Marking: KN
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 0.1 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55~+150 | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | 357 | /W | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0V, ID = 10A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V,VGS = 0V | 0.2 | A | ||
| Gate Source leakage current | IGSS | VGS =20V, VDS = 0V | 2 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS = 3V, ID =100A | 0.8 | 1.5 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS = 4V, ID =10mA | 8 | |||
| Drain-Source On-Resistance | RDS(on) | VGS =2.5V,ID =1mA | 13 | |||
| Forward Transconductance | gFS | VDS =3V, ID = 10mA | 20 | mS | ||
| Dynamic Characteristics* | ||||||
| Input Capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 13 | pF | ||
| Output Capacitance | Coss | 9 | pF | |||
| Reverse Transfer Capacitance | Crss | 4 | pF | |||
| Switching Characteristics* | ||||||
| Turn-On Delay Time | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 15 | ns | ||
| Rise Time | tr | 35 | ns | |||
| Turn-Off Delay Time | td(off) | 80 | ns | |||
| Fall Time | tf | 80 | ns | |||
2410122003_CBI-2SK3018_C2928242.pdf
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