N Channel MOSFET Plastic Encapsulated Device CBI BSS138 Supporting Battery Operated Systems and Displays
Key Attributes
Model Number:
BSS138
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
RDS(on):
6Ω@4.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
27pF@25V
Mfr. Part #:
BSS138
Package:
SOT-23
Product Description
Product Overview
This N-Channel Plastic-Encapsulated MOSFET offers a high-density cell design for extremely low RDS(on) and a rugged, reliable performance. It is designed for direct logic-level interface with TTL/CMOS drivers and is suitable for applications including relays, solenoids, lamps, hammers, displays, memories, transistors, battery-operated systems, and solid-state relays. Key features include a 50V Drain-Source Voltage and low on-resistance values.
Product Attributes
- Type: N-Channel MOSFET
- Encapsulation: Plastic
- Package: SOT-23
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Characteristics | ||||||
| Drain-Source Voltage | V(BR)DSS | VGS = 0V, ID =250A | 50 | V | ||
| Gate-Body Leakage | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =50V, VGS =0V | 0.5 | A | ||
| VDS =30V, VGS =0V | 100 | nA | ||||
| On Characteristics | ||||||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =1mA | 0.80 | 1.50 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS =10V, ID =0.22A | 3.50 | |||
| VGS =4.5V, ID =0.22A | 6 | |||||
| Forward Transconductance | gFS | VDS =10V, ID =0.22A | 0.12 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =25V,VGS =0V, f=1MHz | 27 | pF | ||
| Output Capacitance | Coss | 13 | pF | |||
| Reverse Transfer Capacitance | Crss | 6 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, VDS=10V, ID =0.29A,RGEN=6 | 5 | ns | ||
| Rise Time | tr | 18 | ns | |||
| Turn-off Delay Time | td(off) | 36 | ns | |||
| Fall Time | tf | 14 | ns | |||
| Drain-Source Body Diode Characteristics | ||||||
| Body Diode Forward Voltage | VSD | IS=0.44A, VGS = 0V | 1.4 | V | ||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 50 | V | ||
| Continuous Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 0.22 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 357 | /W | |||
| Operating Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Package Outline (SOT-23) | ||||||
| Symbol | Dimension in Millimeters | Min | Max | |||
| A | 0.90 | 1.10 | ||||
| A1 | 0.013 | 0.100 | ||||
| B | 1.80 | 2.00 | ||||
| bp | 0.35 | 0.50 | ||||
| C | 0.09 | 0.150 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| HE | 2.20 | 2.80 | ||||
| Lp | 0.20 | 0.50 | ||||
| 0 | 5 | |||||
2410121326_CBI-BSS138_C2919775.pdf
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