86--136 6733 2386
quality Planar Die Zener Diode CBI BZT52B30 with Low Reverse Current and 0.9V Forward Voltage Characteristics factory
quality Planar Die Zener Diode CBI BZT52B30 with Low Reverse Current and 0.9V Forward Voltage Characteristics factory

Planar Die Zener Diode CBI BZT52B30 with Low Reverse Current and 0.9V Forward Voltage Characteristics

Key Attributes
Model Number: BZT52B30
Product Custom Attributes
Impedance(Zzt):
80Ω
Zener Voltage(Range):
29.4V~30.6V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
30V
Impedance(Zzk):
300Ω
Mfr. Part #:
BZT52B30
Package:
SOD-123
Product Description

Product Overview

This Zener Diode series features a planar die construction and 350mW power dissipation on a ceramic PCB, making it ideal for general-purpose, medium current applications. Designed for automated assembly processes, these diodes are available in lead-free versions. They offer a wide range of Zener voltages from 2.4V to 43V, with precise voltage regulation and low reverse current characteristics.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Construction: Planar Die
  • Packaging: Plastic Encapsulate Diodes (SOD-123)
  • Availability: Lead Free Version

Technical Specifications

Maximum Ratings (Ta=25C unless otherwise specified) Value Unit
Forward Voltage (@ IF = 10mA) 0.9 V
Power Dissipation (Note 1) 350 mW
Thermal Resistance from Junction to Ambient 357 /W
Junction Temperature 150
Storage Temperature Range -55 ~ +150
Type Number Type Code Zener Voltage Range (Note 2) Test Current (IZTC) Maximum Zener Impedance (Note 3) Maximum Reverse Current (VR=VRWM) Typical Temperature Coefficient
Nom (V) Min (V) Max (V) (mA) () (mA) (mV/C)
BZT52B2V4 2WX 2.4 2.35 2.45 5 100 600 1.0 -3.5
BZT52B2V7 2W1 2.7 2.65 2.75 5 100 600 1.0 -3.5
BZT52B3V0 2W2 3.0 2.94 3.06 5 95 600 1.0 -3.5
BZT52B3V3 2W3 3.3 3.23 3.37 5 95 600 1.0 -3.5
BZT52B3V6 2W4 3.6 3.53 3.67 5 90 600 1.0 -3.5
BZT52B3V9 2W5 3.9 3.82 3.98 5 90 600 1.0 -3.5
BZT52B4V3 2W6 4.3 4.21 4.39 5 90 600 1.0 -3.5
BZT52B4V7 2W7 4.7 4.61 4.79 5 80 500 1.0 -3.5
BZT52B5V1 2W8 5.1 5.00 5.20 5 60 480 1.0 -2.7
BZT52B5V6 2W9 5.6 5.49 5.71 5 40 400 1.0 -2.0
BZT52B6V2 2WA 6.2 6.08 6.32 5 10 150 1.0 0.4
BZT52B6V8 2WB 6.8 6.66 6.94 5 15 80 1.0 1.2
BZT52B7V5 2WC 7.5 7.35 7.65 5 15 80 1.0 2.5
BZT52B8V2 2WD 8.2 8.04 8.36 5 15 80 1.0 3.2
BZT52B9V1 2WE 9.1 8.92 9.28 5 15 100 1.0 3.8
BZT52B10 2WF 10 9.80 10.20 5 20 150 1.0 4.5
BZT52B11 2WG 11 10.78 11.22 5 20 150 1.0 5.4
BZT52B12 2WH 12 11.76 12.24 5 25 150 1.0 6.0
BZT52B13 2WI 13 12.74 13.26 5 30 170 1.0 7.0
BZT52B15 2WJ 15 14.70 15.30 5 30 200 1.0 9.2
BZT52B16 2WK 16 15.68 16.32 5 40 200 1.0 10.4
BZT52B18 2WL 18 17.64 18.36 5 45 225 1.0 12.4
BZT52B20 2WM 20 19.60 20.40 5 55 225 1.0 14.4
BZT52B22 2WN 22 21.56 22.44 5 55 250 1.0 16.4
BZT52B24 2WO 24 23.52 24.48 5 70 250 1.0 18.4
BZT52B27 2WP 27 26.46 27.54 2 80 300 0.5 21.4
BZT52B30 2WQ 30 29.40 30.60 2 80 300 0.5 24.4
BZT52B33 2WR 33 32.34 33.66 2 80 325 0.5 27.4
BZT52B36 2WS 36 35.28 36.72 2 90 350 0.5 30.4
BZT52B39 2WT 39 38.22 39.78 2 130 350 0.5 33.4
BZT52B43 2WU 43 41.16 42.84 2 130 350 0.5 36.4
PACKAGE OUTLINE
Symbol Dimension in Millimeters
Min Max
A 0.95 1.15
A1 0.01 0.100
B 1.55 1.65
bp 0.50 0.70
C 0.09 0.150
E 2.60 2.70
HE 3.45 3.85
Lp 0.20 0.45
0 5

Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2
2. Short duration test pulse used to minimize self-heating effect
3. f = 1kHz


2410121341_CBI-BZT52B30_C21714233.pdf

Related Products
quality Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits factory
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
quality NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component factory
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
quality Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
quality Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits factory
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.