switching N Channel MOSFET CBI CB2310 with low RDS ON resistance and high current handling capability

Product Overview

The BC2310 N-Channel MOSFET utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, offering high power and current handling capability. It is available as a lead-free, surface-mount product.

Product Attributes

• Brand: Heyuan China Base Electronics Technology Co., Ltd.
• Product Type: N-Channel MOSFET
• Material: Plastic-Encapsulate MOSFETS
• Compliance: Lead free product is acquired
• Package: Surface mount

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage	VDS				60	V
Gate-Source Voltage	VGS				±20	V
Continuous Drain Current	ID				3	A
Pulsed Drain Current (note 1)	IDM				10	A
Power Dissipation	PD				0.35	W
Thermal Resistance from Junction to Ambient (note 2)	RθJA				357	/W
Junction Temperature	TJ				150
Storage Temperature	TSTG		-55	~+150
Electrical Characteristics (Ta=25 unless otherwise specified)
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =250µA	60			V
Zero gate voltage drain current	IDSS	VDS =60V,VGS = 0V			1	µA
Gate-body leakage current	IGSS	VGS =±20V, VDS = 0V			±100	nA
Gate threshold voltage (note 3)	VGS(th)	VDS =VGS, ID =250µA	0.5		2	V
Drain-source on-resistance (note 3)	RDS(on)	VGS =10V, ID =3A			105	mΩ
Drain-source on-resistance (note 3)	RDS(on)	VGS =4.5V, ID =3A			125	mΩ
Forward tranconductance (note 3)	gFS	VDS =15V, ID =2A		1.4		S
Diode forward voltage (note 3)	VSD	IS=3A, VGS = 0V			1.2	V
Dynamic Characteristics (note 4)
Input Capacitance	Ciss	VDS =30V,VGS =0V,f =1MHz		247		pF
Output Capacitance	Coss			34		pF
Reverse Transfer Capacitance	Crss			19.5		pF
Switching Characteristics (note 4)
Turn-on delay time	td(on)	VGS=10V,VDD=30V, ID=1.5A,RGEN=1Ω		6		ns
Turn-on rise time	tr			15		ns
Turn-off delay time	td(off)			15		ns
Turn-off fall time	tf			10		ns
Total Gate Charge	Qg	VDS =30V,VGS =4.5V,ID =3A		6		nC
Gate-Source Charge	Qgs			1		nC
Gate-Drain Charge	Qgd			1.3		nC

Applications

• Battery Switch
• DC/DC Converter

2510281820_CBI-CB2310_C52191465.pdf