N Channel MOSFET CBI BC3134KT suitable for load switching in cell phones pagers and power circuits
Key Attributes
Model Number:
BC3134KT
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
RDS(on):
380mΩ@4.5V,650mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
200mW
Mfr. Part #:
BC3134KT
Package:
SOT-523
Product Description
Product Overview
This N-Channel MOSFET is designed for high-side switching applications, offering low on-resistance and a low threshold voltage for efficient operation. It features fast switching speeds, making it suitable for driving relays, solenoids, lamps, and other loads in battery-operated systems, power supply converter circuits, and various load/power switching applications such as cell phones and pagers. The device is encapsulated in a plastic surface-mounted SOT-523 package.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Product Type: N-Channel MOSFET
- Package Type: SOT-523
- Marking: 34K
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | ID | 0.75 | A | |||
| Drain Current -Pulsed (note 1) | IDM | 1.5 | A | |||
| Power Dissipation (note 2) | PD | 200 | mW | |||
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | |||
| Storage Temperature | Tj | -55 | ~+150 | |||
| Junction Temperature | Tstg | -55 | ~+150 | |||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Gate-Threshold Voltage (note 3) | VGS(th) | VDS =VGS, ID =250A | 0.35 | 1.1 | V | |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =10V | 20 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =20V, VGS =0V | 1 | A | ||
| Drain-Source On-State Resistance (note 3) | RDS(on) | VGS =4.5V, ID =650mA | 380 | m | ||
| VGS =2.5V, ID =550mA | 450 | m | ||||
| VGS =1.8V, ID =450mA | 800 | m | ||||
| Forward Transconductance | gFS | VDS =10V, ID =800mA | 1 | S | ||
| Switching Times (note 4) | ||||||
| Turn-On Delay Time | td(on) | VDD=10V,ID=500mA, VGS=4.5V,RG=10 | 6.7 | ns | ||
| Rise Time | tr | 4.8 | ns | |||
| Turn-Off Delay Time | td(off) | 17.3 | ns | |||
| Fall Time | tf | 7.4 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage (note 3) | VSD | IS=0.15A, VGS = 0V | 1.2 | V | ||
| Package Outline | ||||||
| Symbol | Dimension in Millimeters | Min | Max | |||
| A | 0.60 | 0.80 | ||||
| A1 | 0.010 | 0.100 | ||||
| B | 0.95 | 1.05 | ||||
| bp | 0.26 | 0.40 | ||||
| bq | 0.16 | 0.30 | ||||
| C | 0.09 | 0.15 | ||||
| D | 1.50 | 1.70 | ||||
| E | 0.70 | 0.85 | ||||
| HE | 1.45 | 1.75 | ||||
| Lp | 0.16 | 0.36 | ||||
| 0 | 5 | |||||
2410121525_CBI-BC3134KT_C5362117.pdf
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