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quality Zener Diode CBI BZT52C4V7S Plastic Encapsulated with 200mW Power Dissipation and Planar Die Design factory
quality Zener Diode CBI BZT52C4V7S Plastic Encapsulated with 200mW Power Dissipation and Planar Die Design factory

Zener Diode CBI BZT52C4V7S Plastic Encapsulated with 200mW Power Dissipation and Planar Die Design

Key Attributes
Model Number: BZT52C4V7S
Product Custom Attributes
Impedance(Zzt):
80Ω
Diode Configuration:
Independent
Zener Voltage(Range):
4.4V~5V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
4.7V
Impedance(Zzk):
500Ω
Mfr. Part #:
BZT52C4V7S
Package:
SOD-323
Product Description

Product Overview

The BZT52C2V4S-BZT52C39S series are plastic-encapsulated Zener diodes designed for general-purpose, medium-current applications. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for automated assembly processes. They are available in a lead-free version.

Product Attributes

  • Package Type: SOD-323
  • Construction: Planar die
  • Assembly: Ideally suited for automated assembly processes
  • Environmental: Available in lead-free version

Technical Specifications

Model Marking Zener Voltage Range (Note 2) Test Current (IZT) Max. Zener Impedance (ZZT@IZT) Max. Reverse Current (IZK) Forward Voltage (VF @ IF = 10mA) (Note 2) Power Dissipation (Note 1) Thermal Resistance (RJA) Junction Temperature (Tj) Storage Temperature Range (Tstg)
Nom (V) | Min (V) - Max (V) (mA) () (A) (V) (mW) (/W) () ()
BZT52C2V4S WX 2.4 | 2.20 - 2.60 5 600 50 0.9 200 625 150 -55~+150
BZT52C2V7S W1 2.7 | 2.5 - 2.9 5 600 20 0.9 200 625 150 -55~+150
BZT52C3V0S W2 3.0 | 2.8 - 3.2 5 600 10 0.9 200 625 150 -55~+150
BZT52C3V3S W3 3.3 | 3.1 - 3.5 5 600 5 0.9 200 625 150 -55~+150
BZT52C3V6S W4 3.6 | 3.4 - 3.8 5 600 5 0.9 200 625 150 -55~+150
BZT52C3V9S W5 3.9 | 3.7 - 4.1 5 600 3 0.9 200 625 150 -55~+150
BZT52C4V3S W6 4.3 | 4.0 - 4.6 5 600 3 0.9 200 625 150 -55~+150
BZT52C4V7S W7 4.7 | 4.4 - 5.0 5 500 3 0.9 200 625 150 -55~+150
BZT52C5V1S W8 5.1 | 4.8 - 5.4 5 480 2 0.9 200 625 150 -55~+150
BZT52C5V6S W9 5.6 | 5.2 - 6.0 5 400 1 0.9 200 625 150 -55~+150
BZT52C6V2S WA 6.2 | 5.8 - 6.6 5 150 3 0.9 200 625 150 -55~+150
BZT52C6V8S WB 6.8 | 6.4 - 7.2 5 80 2 0.9 200 625 150 -55~+150
BZT52C7V5S WC 7.5 | 7.0 - 7.9 5 80 1 0.9 200 625 150 -55~+150
BZT52C8V2S WD 8.2 | 7.7 - 8.7 5 80 0.7 0.9 200 625 150 -55~+150
BZT52C9V1S WE 9.1 | 8.5 - 9.6 5 100 0.5 0.9 200 625 150 -55~+150
BZT52C10S WF 10 | 9.4 - 10.6 5 150 0.2 0.9 200 625 150 -55~+150
BZT52C11S WG 11 | 10.4 - 11.6 5 150 0.1 0.9 200 625 150 -55~+150
BZT52C12S WH 12 | 11.4 - 12.7 5 150 0.1 0.9 200 625 150 -55~+150
BZT52C13S WI 13 | 12.4 - 14.1 5 170 0.1 0.9 200 625 150 -55~+150
BZT52C15S WJ 15 | 13.8 - 15.6 5 200 0.1 0.9 200 625 150 -55~+150
BZT52C16S WK 16 | 15.3 - 17.1 5 200 0.1 0.9 200 625 150 -55~+150
BZT52C18S WL 18 | 16.8 - 19.1 5 225 0.1 0.9 200 625 150 -55~+150
BZT52C20S WM 20 | 18.8 - 21.2 5 225 0.1 0.9 200 625 150 -55~+150
BZT52C22S WN 22 | 20.8 - 23.3 5 250 0.1 0.9 200 625 150 -55~+150
BZT52C24S WO 24 | 22.8 - 25.6 5 250 0.1 0.9 200 625 150 -55~+150
BZT52C27S WP 27 | 25.1 - 28.9 2 300 0.1 0.9 200 625 150 -55~+150
BZT52C30S WQ 30 | 28.0 - 32.0 2 300 0.1 0.9 200 625 150 -55~+150
BZT52C33S WR 33 | 31.0 - 35.0 2 325 0.1 0.9 200 625 150 -55~+150
BZT52C36S WS 36 | 34.0 - 38.0 2 350 0.1 0.9 200 625 150 -55~+150
BZT52C39S WT 39 | 37.0 - 41.0 2 350 0.1 0.9 200 625 150 -55~+150

Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.


2410121326_CBI-BZT52C4V7S_C2886316.pdf

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