Low Gate Threshold Voltage N Channel Transistor CBI MMBT7002K with ESD Protection and SOT 23 Package
Key Attributes
Model Number:
MMBT7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
4Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Output Capacitance(Coss):
25pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
50pF@25V
Mfr. Part #:
MMBT7002K
Package:
SOT-23
Product Description
Product Overview
The MMBT7002K is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features low on-resistance (RDS(ON)), low gate threshold voltage, and low input capacitance, enhancing its performance. The device is ESD protected up to 2KV and comes in a SOT-23 Plastic Package. Key characteristics include a Drain-Source Breakdown Voltage of 60V and a continuous Drain Current of 300 mA.
Product Attributes
- Type: N-Channel Enhancement Mode Field Effect Transistor
- Package: SOT-23 Plastic Package
- ESD Protection: Up to 2KV
Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||
| Drain-Source Voltage | VDSS | 60 | V |
| Gate-Source Voltage | VGSS | 20 | V |
| Drain Current (Continuous) | ID | 300 | mA |
| Drain Current (Pulse Width 10 s) | IDM | 800 | mA |
| Total Power Dissipation | Ptot | 350 | mW |
| Operating and Storage Temperature Range | Tj, Tstg | - 55 to + 150 | C |
| Characteristics at Ta = 25 C | |||
| Drain Source Breakdown Voltage at ID = 10 A | BVDSS | 60 | V |
| Zero Gate Voltage Drain Current at VDS = 60 V | IDSS | - | 1 A |
| Gate Source Leakage Current at VGS = 20 V | IGSS | - | 10 A |
| Gate Threshold Voltage at VDS = 10 V, ID = 250 A | VGS(th) | 1 | 2.5 V |
| Static Drain Source On-Resistance at VGS = 10 V, ID = 500 mA at VGS = 4.5 V, ID = 200 mA | RDS(ON) | - | 3 |
| - | 4 | ||
| Forward Transconductance at VDS = 10 V, ID = 200 mA | gfs | 80 | mS |
| Input Capacitance at VDS = 25 V, f = 1 MHz | Ciss | - | 50 pF |
| Output Capacitance at VDS = 25 V, f = 1 MHz | Coss | - | 25 pF |
| Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz | Crss | - | 5 pF |
2409271603_CBI-MMBT7002K_C2879714.pdf
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