CET Chino Excel Tech CEM3120 N Channel Enhancement Mode Transistor Designed for High Current and Low RDS
Key Attributes
Model Number:
CEM3120
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-
RDS(on):
22mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 N-channel
Output Capacitance(Coss):
215pF
Input Capacitance(Ciss):
895pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
27nC@10V
Mfr. Part #:
CEM3120
Package:
SOP-8
Product Description
Product Overview
The CEM3120 is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance and efficiency. It features a super high dense cell design for extremely low RDS(ON) and offers high power and current handling capabilities. This transistor is suitable for surface mount applications.
Product Attributes
- Brand: CETSemi
- Product Type: N-Channel Enhancement Mode Field Effect Transistor
- Package: SO-8
- Lead Free: Yes
Technical Specifications
| Parameter | Symbol | Limit | Units | Test Condition |
|---|---|---|---|---|
| FEATURES | ||||
| 30 | V | |||
| 10 | A | |||
| RDS(ON) | 15 | m | @VGS = 10V | |
| RDS(ON) | 22 | m | @VGS = 4.5V | |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 30 | V | TA = 25 C unless otherwise noted |
| Gate-Source Voltage | VGS | 20 | V | |
| Drain Current-Continuous | ID | 40 | A | |
| Drain Current-Pulsed | IDM | 10 | A | a |
| Maximum Power Dissipation | PD | 1 | W | SO-8 |
| Operating and Store Temperature Range | TJ,Tstg | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | 50 | C/W | b |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 30V, VGS = 0V |
| Gate Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 20V, VDS = 0V |
| Gate Body Leakage Current, Reverse | IGSSR | 100 | nA | VGS = -20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 1.3 | V | VGS = VDS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(on) | 15 | m | VGS = 10V, ID = 10A |
| Static Drain-Source On-Resistance | RDS(on) | 22 | m | VGS = 4.5V, ID = 4.5A |
| Input Capacitance | Ciss | 895 | pF | VDS = 15V, ID = 10A, VGS = 10V, f = 1.0 MHz |
| Reverse Transfer Capacitance | Crss | 160 | pF | |
| Output Capacitance | Coss | 215 | pF | |
| Turn-On Delay Time | td(on) | 11 | ns | VDS = 15V, VGS = 0V, f = 1.0 MHz |
| Turn-On Rise Time | tr | 7 | ns | VDD = 15V, ID = 10A, VGS = 10V, RGEN = 3 |
| Turn-Off Delay Time | td(off) | 31 | ns | |
| Turn-Off Fall Time | tf | 14 | ns | |
| Total Gate Charge | Qg | 62 | nC | |
| Gate-Source Charge | Qgs | 10 | nC | |
| Gate-Drain Charge | Qgd | 21 | nC | |
| Drain-Source Diode Forward Current | IS | 40 | A | b |
| Drain-Source Diode Forward Voltage | VSD | 1.3 | V | c |
Notes:
- a. Repetitive Rating: Pulse width limited by maximum junction temperature.
- b. Surface Mounted on FR4 Board, t < 10 sec.
- c. Pulse Test: Pulse Width < 300s, Duty Cycle < 2%.
- d. Guaranteed by design, not subject to production testing.
2410010330_CET-Chino-Excel-Tech-CEM3120_C154304.pdf
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