Low RDS on N Channel MOSFET CBI 2N7002KW with ESD Protection and High Saturation Current Capability
Key Attributes
Model Number:
2N7002KW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-
RDS(on):
5Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
2N7002KW
Package:
SOT-323
Product Description
Product Overview
The 2N7002KW is an N-Channel MOSFET in a SOT-323 plastic-encapsulated package. It features a high-density cell design for low RDS(on), making it suitable as a voltage-controlled small signal switch. This MOSFET is rugged, reliable, and offers high saturation current capability, with ESD protection. It is designed for applications requiring efficient switching and low power dissipation.
Product Attributes
- Package Type: SOT-323
- Transistor Type: N-Channel MOSFET
- Protection: ESD protected
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | ID | 340 | mA | |||
| Pulsed Drain Current (note 1) | IDM | 800 | mA | |||
| Power Dissipation | PD | 0.2 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | |||
| STATIC PARAMETERS | ||||||
| Drain-source Breakdown Voltage | V (BR) DSS | VGS = 0V, ID =250A | 60 | V | ||
| Gate Threshold Voltage (note 2) | VGS(th) | VDS =VGS, ID =1mA | 1 | 1.3 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS =48V,VGS = 0V | 1 | A | ||
| Gate-Source Leakage Current | IGSS | VGS =20V, VDS = 0V | 10 | A | ||
| Drain-Source On-Resistance (note 2) | RDS(on) | VGS =4.5V, ID =200mA | 1.1 | 5.3 | ||
| Drain-Source On-Resistance (note 2) | RDS(on) | VGS =10V, ID =500mA | 0.9 | 5 | ||
| DYNAMIC PARAMETERS (note 3) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | 30 | pF | |||
| Reverse Transfer Capacitance | Crss | 10 | pF | |||
| SWITCHING PARAMETERS (note 3) | ||||||
| Turn-on Delay Time | td(on) | VGS=10V,VDD=50V, RG=50 RGS=50, RL=250 | 10 | ns | ||
| Turn-off Delay Time | td(off) | 15 | ns | |||
| Reverse Recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dIs/dt=-100A/us | 30 | ns | ||
| Recovered Charge | Qr | VGS=0V,IS=300mA,VR=25V dIs/dt=-100A/us | 30 | nC | ||
| GATE-SOURCE ZENER DIODE | ||||||
| Gate-Source Breakdown Voltage | BVGSO | Igs=f1mA(Open Drain) | 21.5 | V | ||
| DRAIN-SOURCE DIODE | ||||||
| Diode Forward Voltage (note 2) | VSD | IS=300mA, VGS = 0V | 1.5 | V | ||
| Continuous Diode Forward Current | IS | 0.2 | A | |||
| Pulsed Diode Forward Current (note 1) | ISM | 0.53 | A | |||
Notes:
1. Repetitive rating: Pulse width limited by junction temperature.
2. Pulse Test: Pulse width 300s, duty cycle 2%.
3. Guaranteed by design, not subject to production testing.
Application Scenarios
Voltage controlled small signal switching.
2410121456_CBI-2N7002KW_C5362104.pdf
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