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quality Plastic Transistor SOT23 Package Changzhou Starsea Elec MMBT3904 for General Electronic Applications factory
quality Plastic Transistor SOT23 Package Changzhou Starsea Elec MMBT3904 for General Electronic Applications factory

Plastic Transistor SOT23 Package Changzhou Starsea Elec MMBT3904 for General Electronic Applications

Key Attributes
Model Number: MMBT3904
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description

Product Overview

The MMBT3904 is a plastic-encapsulated transistor designed for general-purpose applications. It is complementary to the MMBT3906 and offers high stability and reliability. Packaged in a SOT-23 small outline plastic package, it is suitable for various electronic circuits requiring efficient signal amplification and switching.

Product Attributes

  • Package Type: SOT-23
  • Material: Plastic-Encapsulate
  • Certifications: UL: 94V-0
  • Mounting Position: Any
  • Complementary To: MMBT3906
  • Brand: STAR SEA
  • Model Identification: 1AM
  • Internal Part Number: DN:S20G66Z072005A1

Technical Specifications

Parameter Symbol Test Condition Min Max Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current-Continuous IC 200 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Thermal Resistance (Junction to Ambient) RJA 625 /W
Collector-base breakdown voltage V(BR)CBO IC=10uA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10uA, IC=0 6 V
Collector cut-off current ICEX VCE=30V, VEB(off)=3V 50 nA
Collector cut-off current ICBO VCB=60V, IE=0 100 nA
Emitter cut-off current IEBO VEB=5V, IC=0 100 nA
DC current gain (hFE) hFE(1) VCE=1V, IC=10mA 100 300
DC current gain (hFE) hFE(2) VCE=1V, IC=50mA 60
DC current gain (hFE) hFE(3) VCE=1V, IC=100mA 30
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.30 V
Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V
Transition frequency fT VCE=20V, IC=10mA, f=100MHz 300 MHz
Delay time td VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA 35 nS
Rise time tr VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA 35 nS
Storage time ts VCC=3V, IC=10mA, IB1=IB2=1mA 200 nS
Fall time tf VCC=3V, IC=10mA, IB1=IB2=1mA 50 nS

hFE Classification

Classification hFE Range
L 100-200
H 200-300

2204121445_Changzhou-Starsea-Elec-MMBT3904_C2992077.pdf

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