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quality Medium Current Zener Diode CBI BZT52B27 with Planar Die Construction and 350mW Power Dissipation on Ceramic PCB factory
quality Medium Current Zener Diode CBI BZT52B27 with Planar Die Construction and 350mW Power Dissipation on Ceramic PCB factory

Medium Current Zener Diode CBI BZT52B27 with Planar Die Construction and 350mW Power Dissipation on Ceramic PCB

Key Attributes
Model Number: BZT52B27
Product Custom Attributes
Impedance(Zzt):
80Ω
Zener Voltage(Range):
26.46V~27.54V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
27V
Impedance(Zzk):
300Ω
Mfr. Part #:
BZT52B27
Package:
SOD-123
Product Description

Product Overview

This Zener Diode features a planar die construction and 350mW power dissipation on a ceramic PCB, making it ideally suited for general purpose, medium current applications and automated assembly processes. Lead-free versions are available.

Product Attributes

  • Construction: Planar Die
  • Power Dissipation: 350mW on Ceramic PCB
  • Application: General Purpose, Medium Current
  • Assembly: Ideally suited for automated assembly processes
  • Availability: Lead Free Version
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Type Number Type Code Nominal Zener Voltage (V) Minimum Zener Voltage (V) Maximum Zener Voltage (V) Test Current (mA) Maximum Zener Impedance () Maximum Reverse Current (A) Typical Temperature Coefficent (mV/C) Test Current for Temp. Coeff. (mA)
BZT52B2V4 2WX 2.4 2.35 2.45 5 600 50 -3.5 1.0
BZT52B2V7 2W1 2.7 2.65 2.75 5 600 20 -3.5 1.0
BZT52B3V0 2W2 3.0 2.94 3.06 5 600 10 -3.5 1.0
BZT52B3V3 2W3 3.3 3.23 3.37 5 600 5 -3.5 1.0
BZT52B3V6 2W4 3.6 3.53 3.67 5 600 5 -3.5 1.0
BZT52B3V9 2W5 3.9 3.82 3.98 5 600 3 -3.5 1.0
BZT52B4V3 2W6 4.3 4.21 4.39 5 600 3 -3.5 1.0
BZT52B4V7 2W7 4.7 4.61 4.79 5 500 3 -3.5 2.0
BZT52B5V1 2W8 5.1 5.00 5.20 5 480 2 -2.7 1.2
BZT52B5V6 2W9 5.6 5.49 5.71 5 400 1 -2.0 2.5
BZT52B6V2 2WA 6.2 6.08 6.32 5 150 3 0.4 3.7
BZT52B6V8 2WB 6.8 6.66 6.94 5 80 2 1.2 4.5
BZT52B7V5 2WC 7.5 7.35 7.65 5 80 1 2.5 5.3
BZT52B8V2 2WD 8.2 8.04 8.36 5 80 0.7 3.2 6.2
BZT52B9V1 2WE 9.1 8.92 9.28 5 100 0.5 3.8 7.0
BZT52B10 2WF 10 9.80 10.20 5 150 0.2 4.5 8.0
BZT52B11 2WG 11 10.78 11.22 5 150 0.1 5.4 9.0
BZT52B12 2WH 12 11.76 12.24 5 150 0.1 6.0 10.0
BZT52B13 2WI 13 12.74 13.26 5 170 0.1 7.0 11.0
BZT52B15 2WJ 15 14.70 15.30 5 200 0.1 9.2 13.0
BZT52B16 2WK 16 15.68 16.32 5 200 0.1 10.4 14.0
BZT52B18 2WL 18 17.64 18.36 5 225 0.1 12.4 16.0
BZT52B20 2WM 20 19.60 20.40 5 225 0.1 14.4 18.0
BZT52B22 2WN 22 21.56 22.44 5 250 0.1 16.4 20.0
BZT52B24 2WO 24 23.52 24.48 5 250 0.1 18.4 22.0
BZT52B27 2WP 27 26.46 27.54 2 300 0.1 21.4 25.3
BZT52B30 2WQ 30 29.40 30.60 2 300 0.1 24.4 29.4
BZT52B33 2WR 33 32.34 33.66 2 325 0.1 27.4 33.4
BZT52B36 2WS 36 35.28 36.72 2 350 0.1 30.4 37.4
BZT52B39 2WT 39 38.22 39.78 2 350 0.1 33.4 41.2
BZT52B43 2WU 43 41.16 42.84 2 350 0.1 36.4 45.2

Maximum Ratings

Characteristic Symbol Value Unit
Forward Voltage (Note 2) @ IF = 10mA VF 0.9 V
Power Dissipation (Note 1) Pd 350 mW
Thermal Resistance from Junction to Ambient RJA 357 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ +150

Pin Description

  • 1: Cathode
  • 2: Anode

Package Outline (SOD-123)

Symbol Dimension (mm) Min Dimension (mm) Max
A 0.95 1.15
A1 0.01 0.100
B 1.55 1.65
bp 0.50 0.70
C 0.09 0.150
E 2.60 2.70
HE 3.45 3.85
Lp 0.20 0.45
0 5

Notes:

  1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  2. Short duration test pulse used to minimize self-heating effect.
  3. f = 1kHz.

2410121341_CBI-BZT52B27_C21714232.pdf

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