Central CBR1U-D020S TIN LEAD Silicon Bridge Rectifier Ultra Fast Recovery Surface Mount Application

Key Attributes
Model Number: CBR1U-D020S TIN/LEAD
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.05V@1A
Current - Rectified:
1A
Voltage - DC Reverse(Vr):
200V
Mfr. Part #:
CBR1U-D020S TIN/LEAD
Package:
SMD-4P
Product Description

Product Overview

The CENTRAL SEMICONDUCTOR CBR1U-D010S and CBR1U-D020S are ultra-fast silicon bridge rectifiers designed for surface mount applications. These rectifiers are constructed with glass-passivated chips within a durable epoxy molded case, offering reliable full-wave rectification. They are suitable for general-purpose rectification where ultra-fast recovery times are required.

Product Attributes

  • Brand: CENTRAL SEMICONDUCTOR
  • Case Style: SMDIP CASE R3
  • Construction: Silicon Full Wave Ultra Fast Bridge Rectifiers, Glass Passivated Chips
  • Mounting Type: Surface Mount

Technical Specifications

Note: The CBR1U-D010S and CBR1U-D020S series are discontinued and classified as End of Life (EOL). Replacement products are not specified in the provided documentation.

Symbol CBR1U-D010S CBR1U-D020S Units Description
VRRM 100 200 V Peak Repetitive Reverse Voltage
VR 100 200 V DC Blocking Voltage
VR(RMS) 70 140 V RMS Reverse Voltage
IO (TA=40C) 1.0 A Average Forward Current
IFSM 50 A Peak Forward Surge Current
TJ, Tstg -65 to +150 C Operating and Storage Junction Temperature
JA 40 C/W Thermal Resistance
IR (VR=Rated VRRM) 5.0 A Reverse Current (Per Diode)
IR (VR=Rated VRRM, TA=125C) 1.0 mA Reverse Current (Per Diode)
VF (IF=1.0A) 1.05 V Forward Voltage (Per Diode)
trr (IF=500mA, IR=1.0A, Irr=250mA) 50 ns Reverse Recovery Time (Per Diode)

2504101957_Central-CBR1U-D020S-TIN-LEAD_C17676307.pdf

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