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quality Miniature dual P channel MOSFET CBI BSS84V surface mount package for compact and electronic designs factory
quality Miniature dual P channel MOSFET CBI BSS84V surface mount package for compact and electronic designs factory

Miniature dual P channel MOSFET CBI BSS84V surface mount package for compact and electronic designs

Key Attributes
Model Number: BSS84V
Product Custom Attributes
Mfr. Part #:
BSS84V
Package:
SOT-563
Product Description

Product Overview

These miniature surface mount MOSFETs are designed to reduce power loss and conserve energy, making them ideal for use in small power management circuitry. Key features include energy efficiency, low threshold voltage, and high-speed switching. The miniature surface mount package saves board space. Applications include DC-DC converters, load switching, and power management in portable and battery-powered products such as computers, printers, cellular, and cordless telephones.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-563
  • Material: Plastic-Encapsulated
  • Technology: MOSFETs
  • Configuration: Dual P-Channel MOSFET

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS -50 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID -0.13 A
Pulsed Drain Current (note 1) IDM @tp <10 µs -0.52 A
Power Dissipation PD 150 mW
Thermal Resistance from Junction to Ambient (note 2) RθJA 833 °C/W
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 +150 °C
Maximum Lead Temperature for Soldering Purposes, Duration for 5 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (Ta=25 °C unless otherwise specified)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -50 V
Zero gate voltage drain current IDSS VDS =-50V,VGS = 0V -15 µA
VDS =-25V,VGS = 0V -0.1 µA
Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±5 µA
Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =-250µA -0.9 -1.6 -2 V
Drain-source on-resistance (note 3) RDS(on) VGS =-5V, ID =-0.1A 5.8 10 Ω
VGS =-10V, ID =-0.1A 4.5 8 Ω
Forward transconductance (note 1) gFS VDS=-25V; ID=-100mA 50 mS
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance Ciss VDS =5V,VGS =0V,f =1MHz 30 pF
Output capacitance Coss 10 pF
Reverse transfer capacitance Crss 5 pF
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time td(on) VDD=-15V, RL=50Ω, ID =-2.5A 2.5 ns
Turn-on rise time tr 1 ns
Turn-off delay time td(off) 16 ns
Turn-off fall time tf 8 ns
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current IS -0.13 A
Pulsed Current ISM -0.52 A
Diode forward voltage VSD IS=-0.13A, VGS = 0V -2.2 V

Notes:
1. Repetitive rating: Pulse width limited by junction temperature.
2. Surface mounted on FR4 board, t≤10s.
3. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to production.


2510131755_CBI-BSS84V_C51822260.pdf

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