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quality Surface Mount N Channel MOSFET CBI BC3134K Featuring Low RDS on and Lead Free Design for Electronics factory
quality Surface Mount N Channel MOSFET CBI BC3134K Featuring Low RDS on and Lead Free Design for Electronics factory

Surface Mount N Channel MOSFET CBI BC3134K Featuring Low RDS on and Lead Free Design for Electronics

Key Attributes
Model Number: BC3134K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
RDS(on):
800mΩ@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
120pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
BC3134K
Package:
SOT-23
Product Description

Product Overview

This N-Channel MOSFET is designed for load and power switching applications, offering low RDS(on) and operation at low logic-level gate drive. It is suitable for interfacing switching, battery management in ultra-small portable electronics, and logic-level shifting. The product is lead-free and comes in a surface mount package.

Product Attributes

  • Lead Free Product
  • Surface Mount Package
  • N-Channel Switch
  • Logic Level Gate Drive
  • Plastic Encapsulate MOSFETS

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 20 V
Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 A
Gate-body leakage current IGSS VGS =10V, VDS = 0V 20 A
Gate threshold voltage VGS(th) VDS =VGS, ID =250A 0.35 0.54 1.1 V
Drain-source on-resistance RDS(on) VGS =4.5V, ID =0.65A 270 380 m
Drain-source on-resistance RDS(on) VGS =2.5V, ID =0.55A 320 450 m
Drain-source on-resistance RDS(on) VGS =1.8V, ID =0.45A 390 800 m
Forward transconductance gFS VDS =10V, ID =0.8A 1.6 S
Diode forward voltage VSD IS=0.15A, VGS = 0V 1.2 V
Input capacitance Ciss 79 120 pF
Output capacitance Coss 13 20 pF
Reverse transfer capacitance Crss VDS =16V,VGS =0V,f =1MHz 9 15 pF
Turn-on delay time td(on) VGS=4.5V,VDS=10V, ID =500mA,RGEN=10 6.7 ns
Turn-on rise time tr VGS=4.5V,VDS=10V, ID =500mA,RGEN=10 4.8 ns
Turn-off delay time td(off) VGS=4.5V,VDS=10V, ID =500mA,RGEN=10 17.3 ns
Turn-off fall time tf VGS=4.5V,VDS=10V, ID =500mA,RGEN=10 7.4 ns
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current ID (note 1) 0.75 A
Pulsed Drain Current IDM (tp=10s) 1.8 A
Power Dissipation PD (note 1) 350 mW
Thermal Resistance Junction to Ambient RJA (note 1) 357 /W
Operation Junction and Storage Temperature Range TJ,TSTG -55 +150
Lead Temperature for Soldering Purposes TL (1/8 duration for 10 s) 260
Symbol Dimension in Millimeters Min Max
A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
0 5

Notes:

  • 1. Surface mounted on FR4 board using the minimum recommended pad size.
  • 2. Pulse Test : Pulse Width=300s, Duty Cycle=2%.
  • 3. Switching characteristics are independent of operating junction temperatures.
  • 4. Guaranteed by design, not subject to producting.

2410121909_CBI-BC3134K_C21714243.pdf

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