Dual N Channel MOSFET with TrenchFET Technology CBI BC8205 Plastic Encapsulated in SOT 23 6L Package
Key Attributes
Model Number:
BC8205
Product Custom Attributes
Drain To Source Voltage:
19V
Current - Continuous Drain(Id):
6A
RDS(on):
32mΩ@2.5V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
2 N-Channel
Input Capacitance(Ciss):
800pF
Gate Charge(Qg):
11nC
Mfr. Part #:
BC8205
Package:
SOT-23-6L
Product Description
Product Overview
This is a plastic-encapsulated Dual N-Channel MOSFET featuring the TrenchFET technology. It offers excellent RDS(on), low gate charge, and high power and current handling capabilities in a surface mount SOT-23-6L package. Key applications include battery protection, load switching, and power management.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23-6L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 19 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | 6 | A | |||
| Pulsed Drain Current (note 1) | IDM | 25 | A | |||
| Thermal Resistance from Junction to Ambient (note 2) | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Lead Temperature for Soldering Purposes (1/8 from case for 10 s) | TL | 260 | ||||
| STATIC CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 19 | V | ||
| Zero gate voltage drain current | IDSS | VDS =18V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage (note 3) | VGS(th) | VDS =VGS, ID =250A | 0.5 | 0.9 | V | |
| Drain-source on-resistance (note 3) | RDS(on) | VGS =4.5V, ID =6A | 25 | m | ||
| VGS =2.5V, ID =5A | 32 | m | ||||
| Forward tranconductance (note 3) | gFS | VDS =5V, ID =4.5A | 10 | S | ||
| Diode forward voltage (note 3) | VSD | IS=1.25A, VGS = 0V | 1.2 | V | ||
| DYNAMIC CHARACTERISTICS (note 4) | ||||||
| Input Capacitance | Ciss | VDS =8V,VGS =0V,f =1MHz | 800 | pF | ||
| Output Capacitance | Coss | 155 | pF | |||
| Reverse Transfer Capacitance | Crss | 125 | pF | |||
| SWITCHING CHARACTERISTICS (note 4) | ||||||
| Turn-on delay time | td(on) | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 18 | ns | ||
| Turn-on rise time | tr | 5 | ns | |||
| Turn-off delay time | td(off) | 43 | ns | |||
| Turn-off fall time | tf | 20 | ns | |||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID=4A | 11 | nC | ||
| Gate-Source Charge | Qgs | 2.3 | nC | |||
| Gate-Drain Charge | Qgd | 2.5 | nC | |||
2410121525_CBI-BC8205_C5362147.pdf
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