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quality PNP Plastic Encapsulated Transistor Chao He SS8550 SOT 23 Package for Switching Circuit Applications factory
quality PNP Plastic Encapsulated Transistor Chao He SS8550 SOT 23 Package for Switching Circuit Applications factory

PNP Plastic Encapsulated Transistor Chao He SS8550 SOT 23 Package for Switching Circuit Applications

Key Attributes
Model Number: SS8550
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description

Product Overview

The SS8550 is a PNP Plastic-Encapsulated Transistor designed for general-purpose switching applications. Encapsulated in a small SOT-23 surface-mounted device (SMD) plastic package, it is ideally suited for automatic insertion. This transistor is complementary to the SS8050 and can handle a collector current of up to -1.5A.

Product Attributes

  • Brand: CHAOHE MICROELECTRONICS CO., LTD.
  • Package Type: SOT-23
  • Material: Halogen free
  • Flammability Rating: UL 94V-0
  • Marking Code: Y2

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
5. Pinning Information
Base
Emitter
Collector
6. Ordering Information
SS8550 SOT-23 tape & reel 3,000pcs 7 inches
7. Marking Codes
SS8550 Y2
8. Maximum Ratings (Ta=25 unless otherwise noted)
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -1.5 A
PC Collector Power Dissipation 300 mW
RJA Thermal Resistance From Junction To Ambient 417 /W
TJ,Tstg Operation Junction and Storage Temperature Range -55 +150
9. Electrical Characteristics (Ta=25 unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC = -100A, IE=0 -40 V
V(BR)CEO Collector-emitter breakdown voltage IC = -0.1mA, IB=0 -25 V
V(BR)EBO Emitter-base breakdown voltage IE =-100A, IC=0 -5 V
ICBO Collector cut-off current VCB = -35 V, IE=0 -0.1 A
ICEO Collector cut-off current VCE = -25 V, IE=0 -0.1 A
IEBO Emitter cut-off current VEB = -5V, IC=0 -0.1 A
hFE DC current gain VCE = -1 V, IC = -100mA 85 400
VCE = -1 V, IC = -800mA 40
VCE(sat) Collector-emitter saturation voltage IC = -800mA, IB = -80mA -0.5 V
VBE(sat) Base-emitter saturation voltage IC = -800mA, IB = -80mA -1.2 V
fT Transition frequency VCE=-10V, IC = -50mA, f=30MHz 100 MHz
Rank FE
Range L: 85-200, H: 200-350, J: 300-400
11. Package Outline (SOT-23)
Symbol Dimension in millimeter Min Nom Max
A 0.9 1.05 1.2
A1 0.0 0.05 0.1
A2 0.9 1.00 1.10
A3 0.55 0.60 0.65
b 0.30 0.40 0.50
c 0.10 0.11 0.12
D 2.80 2.90 3.0
E 2.25 2.40 2.55
E1 1.20 1.30 1.40
e 1.8 1.9 2.0
L 0.30 0.40 0.50
L1 0.475 0.55 0.625
0 3 6
Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference purposes only.

2511071025_Chao-He-SS8550_C51953471.pdf

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