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quality N channel MOSFET CBI 2SK3019T designed for low voltage drive and easy paralleling in portable devices factory
quality N channel MOSFET CBI 2SK3019T designed for low voltage drive and easy paralleling in portable devices factory

N channel MOSFET CBI 2SK3019T designed for low voltage drive and easy paralleling in portable devices

Key Attributes
Model Number: 2SK3019T
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
RDS(on):
13Ω@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
2SK3019T
Package:
SOT-523
Product Description

Product Overview

This N-channel MOSFET, designed for low voltage drive applications, is ideal for portable equipment. It features low on-resistance and fast switching speeds, simplifying drive circuit design and enabling easy paralleling. The device is housed in a SOT-523 plastic package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-523 Plastic Package
  • Channel Type: N-channel
  • Marking: KN

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Units
MAXIMUM RATINGS (Ta = 25C unless otherwise noted)
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID 0.1 A
Thermal Resistance, Junction-to-Ambient RJA 833 /W
Power Dissipation PD 0.2 W
Junction Temperature TJ 150
Storage Temperature Tstg -55 ~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10A 30 V
Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 1 A
Gate Source leakage current IGSS VGS =20V, VDS = 0V 2 A
Gate Threshold Voltage VGS(th) VDS =3V, ID =100A 0.8 1.5 V
Drain-Source On-Resistance RDS(on) VGS = 4V, ID =10mA 8
Drain-Source On-Resistance RDS(on) VGS =2.5V,ID =1mA 13
Forward Transconductance gFS VDS =3V, ID =10mA 20 mS
Dynamic Characteristics*
Input Capacitance Ciss VDS =5V,VGS =0V,f =1MHz 13 pF
Output Capacitance Coss 9 pF
Reverse Transfer Capacitance Crss 4 pF
Switching Characteristics*
Turn-On Delay Time td(on) VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 15 ns
Rise Time tr 35 ns
Turn-Off Delay Time td(off) 80 ns
Fall Time tf 80 ns

* These parameters have no way to verify.


2410122002_CBI-2SK3019T_C2879717.pdf

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