Plastic encapsulated N channel MOSFET CBI 2SK3018WT designed for dissipation and fast switching speeds
Key Attributes
Model Number:
2SK3018WT
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
13Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
2SK3018WT
Package:
SOT-523
Product Description
Product Overview
This N-channel MOSFET is designed for low on-resistance and fast switching speeds, making it ideal for portable equipment due to its low voltage drive capability. The device features easily designed drive circuits and is suitable for paralleling. It is a plastic-encapsulated MOSFET.
Product Attributes
- Marking: KN
- Type: N-channel MOSFET
- Encapsulation: Plastic-Encapsulate
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C unless otherwise noted) | ||||||
| Drain-Source voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | (Ta = 25C unless otherwise noted) | 0.1 | A | ||
| Power Dissipation | PD | 0.15 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 10A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V,VGS = 0V | 0.2 | A | ||
| Gate Source leakage current | IGSS | VGS =20V, VDS = 0V | 2 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS =3V, ID =100A | 0.8 | 1.5 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS = 4V, ID =10mA | 8 | |||
| VGS =2.5V,ID =1mA | 13 | |||||
| Forward Transconductance | gFS | VDS =3V, ID =10mA | 20 | mS | ||
| Dynamic Characteristics* | ||||||
| Input Capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 13 | pF | ||
| Output Capacitance | Coss | 9 | pF | |||
| Reverse Transfer Capacitance | Crss | 4 | pF | |||
| Switching Characteristics* | ||||||
| Turn-On Delay Time | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 15 | ns | ||
| Rise Time | tr | 35 | ns | |||
| Turn-Off Delay Time | td(off) | 80 | ns | |||
| Fall Time | tf | 80 | ns | |||
| *These parameters have no way to verify. | ||||||
| Package Outline: SOT523 | ||||||
| Pinout: 1. GATE, 2. SOURCE, 3. DRAIN | ||||||
2410122002_CBI-2SK3018WT_C2879716.pdf
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