power switching device CBI BC1012 N Channel Enhancement Mode MOSFET with low input capacitance and leakage
Key Attributes
Model Number:
BC1012
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
630mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
700mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.37pF
Output Capacitance(Coss):
9.68pF
Input Capacitance(Ciss):
60.67pF
Pd - Power Dissipation:
280mW
Gate Charge(Qg):
798.6pC@4.5V
Mfr. Part #:
BC1012
Package:
SOT-23
Product Description
Product Overview
This N-Channel Enhancement Mode MOSFET is designed for efficient power switching applications. It features low on-resistance, low gate threshold voltage, and low input capacitance, contributing to fast switching speeds. The device also offers low input/output leakage and is ESD protected up to 2kV. It is Lead-Free and RoHS Compliant. Typical applications benefit from its robust performance characteristics and reliable operation.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Lead Free By Design/RoHS Compliant
- Protection: ESD Protected up to 2kV
- Marking Code: NA1
- Package: Plastic-Encapsulate MOSFETS, SOT-23
Technical Specifications
| Characteristic | Symbol | Value | Units | Test Condition |
|---|---|---|---|---|
| Maximum Ratings @TA = 25C unless otherwise specified | ||||
| Drain-Source Voltage | VDSS | 20 | V | |
| Gate-Source Voltage | VGSS | ±6 | V | |
| Continuous Drain Current (Note 1) Steady State | ID | 0.63 (TA = 25°C) / 0.45 (TA = 85°C) | A | |
| Pulsed Drain Current | IDM | 6 | A | |
| Thermal Characteristics @TA = 25C unless otherwise specified | ||||
| Total Power Dissipation (Note 1) | PD | 0.28 | W | |
| Thermal Resistance, Junction to Ambient | RθJA | 452 | °C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Electrical Characteristics @TA = 25°C unless otherwise specified | ||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250µA |
| Zero Gate Voltage Drain Current | IDSS | 100 (Max) | nA | VDS = 20V, VGS = 0V, TJ = 25°C |
| Gate-Source Leakage | IGSS | ±1.0 (Max) | µA | VGS = ±4.5V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 0.5 - 1.0 | V | VDS = VGS, ID = 250µA |
| Static Drain-Source On-Resistance | RDS (ON) | 0.3 - 0.4 | Ω | VGS = 4.5V, ID = 600mA |
| 0.4 - 0.5 | Ω | VGS = 2.5V, ID = 500mA | ||
| 0.5 - 0.7 | Ω | VGS = 1.8V, ID = 350mA | ||
| Forward Transfer Admittance | |Yfs| | 1.4 (Typ) | S | VDS = 10V, ID = 400mA |
| Diode Forward Voltage (Note 4) | VSD | 0.7 - 1.2 | V | VGS = 0V, IS = 150mA |
| Input Capacitance | Ciss | 60.67 (Typ) | pF | VDS =16V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 9.68 (Typ) | pF | VDS =16V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 5.37 (Typ) | pF | VDS =16V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | 736.6 (Typ) | pC | VGS =4.5V, VDS = 10V, ID =250mA |
| Gate-Source Charge | Qgs | 93.6 (Typ) | pC | VGS =4.5V, VDS = 10V, ID =250mA |
| Gate-Drain Charge | Qgd | 116.6 (Typ) | pC | VGS =4.5V, VDS = 10V, ID =250mA |
| Turn-On Delay Time | tD(on) | 5.1 (Typ) | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA |
| Turn-On Rise Time | tr | 7.4 (Typ) | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA |
| Turn-Off Delay Time | tD(off) | 26.7 (Typ) | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA |
| Turn-Off Fall Time | tf | 12.3 (Typ) | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA |
| Package Outline | ||||
| Symbol | Dimension | Min | Max | Units |
| A | 0.90 | 1.10 | mm | |
| A1 | 0.013 | 0.100 | mm | |
| B | 1.80 | 2.00 | mm | |
| bp | 0.35 | 0.50 | mm | |
| C | 0.09 | 0.150 | mm | |
| D | 2.80 | 3.00 | mm | |
| E | 1.20 | 1.40 | mm | |
| HE | 2.20 | 2.80 | mm | |
| Lp | 0.20 | 0.50 | mm | |
| θ | 0° | 5° | ||
2410010333_CBI-BC1012_C21714104.pdf
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