Voltage Controlled N Channel MOSFET CBI 2N7002KT High Density Cell Design for Small Signal Switching
Key Attributes
Model Number:
2N7002KT
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.3Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
-
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002KT
Package:
SOT-523
Product Description
Product Overview
The 2N7002KT is an N-Channel MOSFET designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(on), ensuring efficient operation. This rugged and reliable MOSFET offers high saturation current capability and is ESD protected. It is suitable for various applications requiring a dependable small signal switch.
Product Attributes
- Type: N-Channel MOSFET
- Package: SOT-523 Plastic-Encapsulate
- Model: 2N7002KT
- Key Features: High density cell design, Voltage controlled, Rugged and reliable, High saturation current capability, ESD protected
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | ID | 340 | mA | |||
| Pulsed Drain Current (note1) | IDM | 800 | mA | |||
| Power Dissipation | PD | 0.15 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | |||
| STATIC PARAMETERS (note 2) | ||||||
| Drain-source Breakdown Voltage | V (BR) DSS | VGS = 0V, ID =250A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =1mA | 1 | 1.3 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS =48V,VGS = 0V | 1 | A | ||
| Gate-Source Leakage Current | IGSS | VGS =20V, VDS = 0V | 10 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V, ID =200mA | 1.1 | 5.3 | ||
| Drain-Source On-Resistance | RDS(on) | VGS =10V, ID =500mA | 0.9 | 5 | ||
| DYNAMIC PARAMETERS (note 3) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 30 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 10 | pF | ||
| SWITCHING PARAMETERS (note 3) | ||||||
| Turn-on Delay Time | td(on) | VGS=10V,VDD=50V, RG=50 RGS=50, RL=250 | 10 | ns | ||
| Turn-off Delay Time | td(off) | VGS=10V,VDD=50V, RG=50 RGS=50, RL=250 | 15 | ns | ||
| Reverse Recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dIs/dt=-100A/us | 30 | ns | ||
| Recovered Charge | Qr | VGS=0V,IS=300mA,VR=25V dIs/dt=-100A/us | 30 | nC | ||
| GATE-SOURCE ZENER DIODE | ||||||
| Gate-Source Breakdown Voltage | BVGSO | Igs=f1mA(Open Drain) | 21.5 | V | ||
| DRAIN-SOURCE DIODE | ||||||
| Diode Forward Voltage (note 2) | VSD | IS=300mA, VGS = 0V | 1.5 | V | ||
| Continuous Diode Forward Current | IS | 0.2 | A | |||
| Pulsed Diode Forward Current (note1) | ISM | 0.53 | A | |||
Notes:
1. Repetitive rating: Pulse width limited by junction temperature.
2. Pulse Test: Pulse width 300s, duty cycle%.
3. Guaranteed by design, not subject to production testing.
2410121455_CBI-2N7002KT_C2840287.pdf
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