P Channel Enhancement Mode Field Effect Transistor CBI BC3401 with Gate Voltage as Low as 2.5 Volts
Product Overview
The BC3401 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is well-suited for applications such as load switches or PWM applications. The BC3401 is a Pb-free product meeting ROHS & Sony 259 specifications, while the BC3401L is a Green Product ordering option. Both variants are electrically identical.
Product Attributes
- Brand: AOS (implied by copyright and product name convention)
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Product Variants: BC3401 (Pb-free), BC3401L (Green Product)
- Certifications: ROHS & Sony 259 specifications
- Packaging: SOT-23 (Plastic surface mounted package; 3 leads)
- Product Type: P-Channel Enhancement Mode Field Effect Transistor
- Market Suitability: Designed and qualified for the consumer market. Applications or uses as critical components in life support devices or systems are not authorized.
Technical Specifications
| Parameter | Units | Conditions | Min | Typ | Max |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS | V | -30 | |||
| VGS | V | -65 | 90 | ||
| ID | A | TA=25C | -85 | ||
| IDM | A | t 10s | -125 | ||
| PD | W | TA=25C | 1.4 | ||
| PD | W | TA=70C | 1 | ||
| RJL | C/W | Steady-State | 43 | 60 | |
| RJA | C/W | Steady-State | 90 | ||
| TJ, TSTG | C | -55 | 150 | ||
| Electrical Characteristics (TJ=25C unless otherwise noted) | |||||
| BVDSS | V | ID=-250A, VGS=0V | -30 | ||
| IDSS | A | VDS=VGS, TJ=55C | -1 | -5 | |
| IDSS | A | VDS=-24V, VGS=0V | -1 | ||
| IGSS | nA | VDS=0V, VGS=12V | 100 | ||
| VGS(th) | V | ID=-250A, VDS=VGS | -0.7 | -1 | -1.3 |
| RDS(ON) | m | VGS=-2.5V, ID=-1A | 80 | 120 | |
| RDS(ON) | m | VGS=-4.5V, ID=-4A | 42 | 50 | |
| RDS(ON) | m | VGS=-10V, ID=-4.2A | 50 | ||
| RDS(ON) | m | VGS=-10V, ID=-4.2A | 50 | ||
| RDS(ON) | m | VGS=-10V, ID=-4.2A | 50 | ||
| gFS | S | VDS=-5V, ID=-5A | 7 | 11 | |
| VSD | V | IS=-1A,VGS=0V | -0.75 | -1 | |
| ID(ON) | A | VGS=-4.5V, VDS=-5V | -25 | ||
| IS | A | -2.2 | |||
| Dynamic Parameters | |||||
| Ciss | pF | VGS=0V, VDS=-15V, f=1MHz | 954 | ||
| Coss | pF | VGS=0V, VDS=-15V, f=1MHz | 115 | ||
| Crss | pF | VGS=0V, VDS=-15V, f=1MHz | 77 | ||
| Qg | nC | VGS=-10V, VDS=-15V, ID=-4A | 9.4 | ||
| Qgs | nC | VGS=-4.5V, VDS=-15V, ID=-4A | 2 | ||
| Qgd | nC | VGS=-4.5V, VDS=-15V, ID=-4A | 3 | ||
| Rg | VGS=0V, VDS=0V, f=1MHz | 6 | |||
| Switching Parameters | |||||
| tD(on) | ns | VGS=-10V, VDS=-15V, RL=3.6, RGEN=6 | 6.3 | ||
| tr | ns | VGS=-10V, VDS=-15V, RL=3.6, RGEN=6 | 3.2 | ||
| tD(off) | ns | VGS=-10V, VDS=-15V, RL=3.6, RGEN=6 | 38.2 | ||
| tf | ns | VGS=-10V, VDS=-15V, RL=3.6, RGEN=6 | 12 | ||
| Body Diode Characteristics | |||||
| VSD | V | IS=-1A, VGS=0V | -0.75 | -1 | |
| trr | ns | IF=-4A, dI/dt=100A/s | 20.2 | ||
| Qrr | nC | IF=-4A, dI/dt=100A/s | 11.2 | ||
| Maximum Body-Diode Continuous Current | A | -2.2 | |||
Note A: The value of RJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
Note B: Repetitive rating, pulse width limited by junction temperature.
Note C: The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient.
Note D: The static characteristics in Figures 1 to 6, 12, 14 are obtained using 80 s pulses, duty cycle 0.5% max.
Note E: These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
2410121849_CBI-BC3401_C5366419.pdf
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