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quality General purpose transistor Changzhou Starsea Elec MMBT3906 plastic encapsulated SOT23 package with stability factory
quality General purpose transistor Changzhou Starsea Elec MMBT3906 plastic encapsulated SOT23 package with stability factory

General purpose transistor Changzhou Starsea Elec MMBT3906 plastic encapsulated SOT23 package with stability

Key Attributes
Model Number: MMBT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description

Product Overview

The MMBT3906 is a plastic-encapsulated transistor in a SOT-23 package, serving as a complementary component to the MMBT3904. It offers high stability and reliability with a power dissipation of 200mW. This device is suitable for general-purpose applications requiring a compact surface-mounted solution.

Product Attributes

  • Package Type: SOT-23 (Small Outline Plastic Package)
  • Material: Epoxy
  • Flammability Rating: UL: 94V-0
  • Mounting Position: Any
  • Marking Code: 2A
  • Complementary Type: MMBT3904

Technical Specifications

Parameter Symbol Test Condition Min Max Unit
Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified)
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current-Continuous IC -200 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Thermal resistance From junction to ambient RJA 625 /W
Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=-10uA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-10uA, IC=0 -5 V
Collector cut-off current ICEX VCE=-30V, VEB(off)=-3V -100 nA
Collector cut-off current ICBO VCB=-40V, IE=0 -50 nA
Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA
DC current gain hFE(1) VCE=-1V, IC=-10mA 100 300
hFE(2) VCE=-1V, IC=-50mA 60
hFE(3) VCE=-1V, IC=-100mA 30
Collector-emitter saturation voltage VCE(sat)1 IC=-50mA, IB=-5mA -0.30 V
Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA -0.95 V
Transition frequency fT VCE=-20V, IC=-10mA,f=100MHz 300 MHz
Delay time td VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-1mA 35 nS
Rise time tr VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-1mA 35 nS
Storage time ts VCC=-3V, IC=-10mA, IB1=IB2=-1mA 225 nS
Fall time tf VCC=-3V, IC=-10mA, IB1=IB2=-1mA 75 nS
CLASSIFICATION OF hFE(1)
HFE RANK L H
RANGE 100-200 200-300

2204121445_Changzhou-Starsea-Elec-MMBT3906_C2992090.pdf

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