Lead Free Dual Enhancement Mode Field Effect Transistor CET Chino Excel Tech CEH2609 with TSOP 6 Package
Key Attributes
Model Number:
CEH2609
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
1.14W
Gate Charge(Qg):
3.6nC@3.3V
Mfr. Part #:
CEH2609
Package:
TSOP-6
Product Description
Product Overview
The CEH2609 is a Dual Enhancement Mode Field Effect Transistor featuring both N-Channel and P-Channel configurations. It is designed with a super high dense cell structure for extremely low RDS(ON), offering high power and current handling capabilities. This transistor is suitable for surface mount applications and is available as a lead-free product.
Product Attributes
- Brand: CET Semi
- Model: CEH2609
- Package: TSOP-6
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | N-Channel Units | P-Channel Units | Test Condition | Min | Typ | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA = 25C unless otherwise noted) | |||||||
| Drain-Source Voltage | VDS | 20 V | -20 V | ||||
| Gate-Source Voltage | VGS | 12 V | 12 V | ||||
| Drain Current-Continuous | ID | 3.5 A | -2.5 A | ||||
| Drain Current-Pulsed a | IDM | 14 A | -10 A | ||||
| Maximum Power Dissipation | PD | 1.14 W | |||||
| Operating and Store Temperature Range | TJ, Tstg | C | C | -55 | 150 | ||
| Thermal Resistance, Junction-to-Ambient b | RJA | C/W | C/W | 110 | |||
| N-Channel Electrical Characteristics (TA = 25C unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | V | VGS = 0V, ID = 250A | 20 | |||
| Zero Gate Voltage Drain Current | IDSS | A | VDS = 20V, VGS = 0V | 1 | 100 | ||
| Gate Body Leakage Current, Forward | IGSSR | nA | VGS = 12V, VDS = 0V | 100 | |||
| Gate Body Leakage Current, Reverse | IGSSF | nA | VGS = -12V, VDS = 0V | -100 | |||
| Gate Threshold Voltage | VGS(th) | V | VGS = VDS, ID = 250A | 0.4 | 1.2 | ||
| Static Drain-Source On-Resistance | RDS(on) | m | VGS = 4.5V, ID = 3.5A | 60 | |||
| Static Drain-Source On-Resistance | RDS(on) | m | VGS = 2.5V, ID = 2.0A | 80 | |||
| Input Capacitance | Ciss | pF | VDD = 10V, ID = 3.5A, VGS = 4.5V, RGEN = 6 | 380 | |||
| Reverse Transfer Capacitance | Crss | pF | VDS = 10V, ID = 3.5A, VGS = 3.3V | 90 | |||
| Output Capacitance | Coss | pF | VDS = 10V, VGS = 0V, f = 1.0 MHz | 60 | |||
| Turn-On Delay Time | td(on) | ns | 16 | ||||
| Turn-On Rise Time | tr | ns | 16 | ||||
| Turn-Off Delay Time | td(off) | ns | 32 | ||||
| Turn-Off Fall Time | tf | ns | 7 | ||||
| Total Gate Charge | Qg | nC | 3.6 | ||||
| Gate-Source Charge | Qgs | nC | 1.0 | ||||
| Gate-Drain Charge | Qgd | nC | 1.2 | ||||
| Drain-Source Diode Forward Current | IS | A | VGS = 0V, IS = 1A | 1.1 | |||
| Drain-Source Diode Forward Voltage | VSD | V | 1.14 | ||||
| P-Channel Electrical Characteristics (TA = 25C unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | V | VGS = 0V, ID = -250A | -20 | |||
| Zero Gate Voltage Drain Current | IDSS | A | VDS = -16V, VGS = 0V | -1 | -100 | ||
| Gate Body Leakage Current, Forward | IGSSR | nA | VGS = 12V, VDS = 0V | 100 | |||
| Gate Body Leakage Current, Reverse | IGSSF | nA | VGS = -12V, VDS = 0V | -100 | |||
| Gate Threshold Voltage | VGS(th) | V | VGS = VDS, ID = -250A | -0.4 | -1.2 | ||
| Static Drain-Source On-Resistance | RDS(on) | m | VGS = -4.5V, ID = -2.5A | 100 | |||
| Static Drain-Source On-Resistance | RDS(on) | m | VGS = -2.5V, ID = -1.5A | 145 | |||
| Input Capacitance | Ciss | pF | VDD = -10V, ID = -2.5A, VGS = -4.5V, RGEN = 3 | 375 | |||
| Reverse Transfer Capacitance | Crss | pF | VDS = -10V, ID = -2.0A, VGS = -3.3V | 90 | |||
| Output Capacitance | Coss | pF | VDS = -10V, VGS = 0V, f = 1.0 MHz | 60 | |||
| Turn-On Delay Time | td(on) | ns | 17 | ||||
| Turn-On Rise Time | tr | ns | 17 | ||||
| Turn-Off Delay Time | td(off) | ns | 27 | ||||
| Turn-Off Fall Time | tf | ns | 7 | ||||
| Total Gate Charge | Qg | nC | 2.9 | ||||
| Gate-Source Charge | Qgs | nC | 0.46 | ||||
| Gate-Drain Charge | Qgd | nC | 1.19 | ||||
| Drain-Source Diode Forward Current | IS | A | VGS = 0V, IS = -1A | -1.1 | |||
| Drain-Source Diode Forward Voltage | VSD | V | -1.2 | ||||
2411220210_CET-Chino-Excel-Tech-CEH2609_C154295.pdf
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