small signal switching diode Changzhou Starsea Elec 1N4148 with glass sealed envelope and plated axial leads

Key Attributes
Model Number: 1N4148
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
5uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-65℃~+200℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
-
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
150mA
Mfr. Part #:
1N4148
Package:
DO-35
Product Description

Product Overview

The 1N4148 is a silicon epitaxial planar diode designed for small signal switching applications. It features a glass-sealed envelope with plated axial leads, ensuring solderability per MIL-STD-750. This diode offers a power dissipation of 500mW and is guaranteed for high-temperature soldering at 250C for 10 seconds. It is suitable for various electronic circuits requiring fast switching speeds and reliable performance.

Product Attributes

  • Case: DO-34/DO-35 glass sealed envelope
  • Terminals: Plated axial leads
  • Polarity: Color band denotes cathode end
  • Mounting Position: Any

Technical Specifications

Symbol Description DO-34 (Glass) DO-35 (Glass) Units
VRRM Maximum repetitive peak reverse voltage 100 100 Volts
VRMS Maximum RMS voltage 75 75 Volts
I(AV) Maximum average forward rectified current at TA=25C 375 375 mA
IFSM Peak forward surge current (8.3ms single half sine-wave) 4 4 A
VF Maximum instantaneous forward voltage at 10mA 1.0 1.0 Volts
IR Maximum DC reverse current at rated DC blocking voltage 5.0 (at VR=75V, TA=25C) 5.0 (at VR=75V, TA=25C) µA
IR Maximum DC reverse current at rated DC blocking voltage 50 (at VR=20V, TA=100C) 50 (at VR=20V, TA=100C) µA
trr Maximum reverse recovery time (Note 1) 4.0 4.0 ns
CJ Typical junction capacitance (Note 2) 4.0 4.0 pF
TJ, TSTG Operating junction and storage temperature range -65 to +200 C
Weight (DO-34) 0.003 ounce 0.09 grams
Weight (DO-35) 0.005 ounce 0.14 grams
Power Dissipation 500 500 mW

Notes:
1. Test condition: IF=10mA, IR=10mA, Irr=1mA, VR=6V, RL=100Ω.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 volts.


1810301823_Changzhou-Starsea-Elec-1N4148_C85057.pdf

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