Power switching transistor CET Chino Excel Tech CEC2088E N Channel Enhancement Mode FET with low RDS
Key Attributes
Model Number:
CEC2088E
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
36A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
220pF
Number:
2 N-Channel
Input Capacitance(Ciss):
2.495nF
Output Capacitance(Coss):
275pF
Pd - Power Dissipation:
17.8W
Gate Charge(Qg):
24nC@4.5V
Mfr. Part #:
CEC2088E
Package:
DFN-8(3x3)
Product Description
Product Overview
The CEC2088E is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capabilities. This transistor is suitable for applications requiring efficient power switching and management.
Product Attributes
- Brand: CET-MOS (implied by URL)
- RoHS Compliant
- Lead-free plating
- ESD Protected: 2000 V
- Preliminary information on a new product in development
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| FEATURES | ||||||
| VGS = 4.5V | 9 | m | ||||
| VGS = 2.5V | 12 | m | ||||
| VGS = 1.8V | 16 | m | ||||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | TA = 25 C unless otherwise noted | 20 | V | ||
| Gate-Source Voltage | VGS | 8 | V | |||
| Drain Current-Continuous | ID@RJc | 56 | A | |||
| Drain Current-Continuous | ID@RJA | 36 | A | |||
| Maximum Power Dissipation | PD | 17.8 | W | |||
| Drain Current-Pulsed | IDM@RJc | 144 | A | |||
| Drain Current-Pulsed | IDM@RJA | 14 | A | |||
| Operating and Store Temperature Range | TJ,Tstg | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJc | b | 7 | C/W | ||
| Thermal Resistance, Junction-to-Ambient | RJA | b | 50 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V | 0.35 | 1 | A | |
| Gate Body Leakage Current, Forward | IGSSF | VGS = 8V, VDS = 0V | 10 | A | ||
| Gate Body Leakage Current, Reverse | IGSSR | VGS = -8V, VDS = 0V | 10 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1 | 2 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID = 3A | 9 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS = 2.5V, ID = 3A | 12 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS = 1.8V, ID = 3A | 16 | m | ||
| Input Capacitance | Ciss | VDS = 16V, ID = 12A, VGS = 4.5V | 2495 | pF | ||
| Reverse Transfer Capacitance | Coss | VDS = 10V, VGS = 0V, f = 1.0 MHz | 275 | pF | ||
| Output Capacitance | Crss | 220 | pF | |||
| Turn-On Delay Time | td(on) | VDD = 16V, ID = 6A, VGS= 4.5V, RGEN= 6 | 28 | ns | ||
| Turn-On Rise Time | tr | 16 | ns | |||
| Turn-Off Delay Time | td(off) | 80 | ns | |||
| Turn-Off Fall Time | tf | 15 | ns | |||
| Total Gate Charge | Qg | 24 | nC | |||
| Gate-Source Charge | Qgs | 4 | nC | |||
| Gate-Drain Charge | Qgd | 5 | nC | |||
| Drain-Source Diode Forward Current | IS | 14 | A | |||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0V, IS = 14A | 1.2 | V | ||
2409302135_CET-Chino-Excel-Tech-CEC2088E_C207743.pdf
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