Load switching and switching circuits ChipNobo DMTH4014LPSW 13 CN N channel MOSFET featuring low RDS
Key Attributes
Model Number:
DMTH4014LPSW-13-CN
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
80A
RDS(on):
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
63pF
Input Capacitance(Ciss):
1.13nF
Output Capacitance(Coss):
383pF
Pd - Power Dissipation:
52W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
DMTH4014LPSW-13-CN
Package:
PDFN5x6-8
Product Description
Product Overview
This high-performance N-channel MOSFET is designed for efficient load switching, switching circuits, high-speed line driving, and power management applications. It features low RDS(on) at VGS = 10V, logic-level control, and is 100% UIS tested. The device is Pb-Free and RoHS Compliant, ensuring environmental responsibility.
Product Attributes
- Brand: ChipNobo
- Package Type: PDFN5X6
- Certifications: PbFree, RoHS Compliant
Technical Specifications
| Parameter | Rating | Unit | Condition | Min | Typ | Max | |
|---|---|---|---|---|---|---|---|
| Common Ratings (TA=25C Unless Otherwise Noted) | |||||||
| Gate-Source Voltage | VGS | V | 20 | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | V | 40 | -- | -- | ||
| Maximum Junction Temperature | TJ | C | 150 | ||||
| Storage Temperature Range | TSTG | C | -50 | 175 | |||
| Pulse Drain Current | IDM | A | Tested TA =25C | 220 | |||
| Continuous Drain Current | ID | A | TA =25C | 80 | |||
| Continuous Drain Current | ID | A | TA =70C | 64 | |||
| Maximum Power Dissipation | PD | W | TA =25C | 52 | |||
| Avalanche energy, single pulsed | EAS | mJ | 110 | ||||
| Thermal Resistance Junction-Ambient | RJC | C/W | Mounted on Large Heat Sink | 2.4 | |||
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | V | VGS=0V ID=250A | 40 | -- | -- | |
| Zero Gate Voltage Drain Current | IDSS | A | VDS=40V, VGS=0V (TA=25) | -- | -- | 1 | |
| Zero Gate Voltage Drain Current | IDSS | nA | VDS=32V, VGS=0V (TA=125) | -- | -- | 100 | |
| Gate-Body Leakage Current | IGSS | nA | VGS=20V, VDS=0V | -- | -- | 100 | |
| Gate Threshold Voltage | VGS(TH) | V | VDS=VGS, ID=250A | 1.5 | 2.0 | 2.5 | |
| Drain-Source On-State Resistance | RDS(ON) | m | VGS=10V, ID=15A | -- | 3.5 | 5.0 | |
| Drain-Source On-State Resistance | RDS(ON) | m | VGS=4.5V, ID=10A | -- | 7.2 | 9.0 | |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | |||||||
| Input Capacitance | Ciss | pF | VDS=20V,VGS=0V, f=1MHz | -- | 1130 | -- | |
| Output Capacitance | Coss | pF | -- | 383 | -- | ||
| Reverse Transfer Capacitance | Crss | pF | -- | 63 | -- | ||
| Total Gate Charge | Qg | nC | VDS=20V ID=20A, VGS=10V | -- | 25 | -- | |
| Gate Source Charge | Qgs | nC | -- | 2.4 | -- | ||
| Gate Drain Charge | Qgd | nC | -- | 6.9 | -- | ||
| Switching Characteristics | |||||||
| Turn on Delay Time | td(on) | ns | VDD=20V, ID=1A, RG=3.3, VGS=10V | -- | 8.0 | -- | |
| Turn on Rise Time | tr | ns | -- | 12 | -- | ||
| Turn Off Delay Time | td(off) | ns | - | 25 | -- | ||
| Turn Off Fall Time | tf | ns | -- | 18 | -- | ||
| Source Drain Diode Characteristics | |||||||
| Source drain current (Body Diode) | ISD | A | TA=25 | -- | -- | 80 | |
| Forward on voltage | VSD | V | Tj=25, ISD=5A, VGS=0V | -- | 0.84 | 1.2 | |
| Order Information | |||||||
| Product | Package | Marking | Packing | Model | |||
| DMTH4014LPSW-13-CN | PDFN5X6 | 5R6 | 5000PCS/Re | ||||
| Dimensions PDFN5X6 (unit : mm) | |||||||
| Symbol | Min | Typ | Max | Symbol | Min | Typ | Max |
| A | 0.90 | 1.02 | 1.10 | D | 4.90 | 4.98 | 5.10 |
| D1 | 4.80 | 4.89 | 5.00 | E | 6.00 | 6.11 | 6.20 |
| E1 | 5.65 | 5.74 | 5.85 | e | 3.72 | 3.80 | 3.92 |
| e1 | -- | 0.54 | -- | e2 | -- | 1.27 | -- |
| f | -- | 3.82 | -- | f1 | 0.31 | 0.37 | 0.51 |
| f2 | -- | 0.64 | -- | H | -- | 3.15 | -- |
| H1 | 0.59 | 0.63 | 0.79 | H2 | 0.26 | 0.28 | 0.32 |
| L | 3.38 | 3.45 | 3.58 | L1 | -- | 1.39 | -- |
| v | -- | 0.13 | -- | w | 0.64 | 0.68 | 0.84 |
| y | -- | 0.34 | -- | ||||
Notes:
Pulse width limited by maximum allowable junction temperature.
Pulse test ; Pulse width 300s, duty cycle 2%.
2507091655_ChipNobo-DMTH4014LPSW-13-CN_C42436827.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
