Power Switching MOSFET ChipNobo DMN3404L-7-CN SOT-23 Package with Low On Resistance and High Current
Key Attributes
Model Number:
DMN3404L-7-CN
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
42mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
118pF
Input Capacitance(Ciss):
820pF
Mfr. Part #:
DMN3404L-7-CN
Package:
SOT-23
Product Description
Product Overview
This SOT-23 packaged MOSFET features a high-density cell design for extremely low RDS(on) and exceptional on-resistance and maximum DC current capability. It is suitable for load/power switching and interfacing applications. The device is constructed with Epoxy UL 94V-0 rated material and can be mounted in any position.
Product Attributes
- Package: SOT-23
- Epoxy UL Flammability Rating: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameters | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Drain Current-Pulsed (note 1) | IDM | 30 | A | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| Thermal Resistance From Junction to Ambient (note 2) | RθJA | 357 | /W | |||
| Electrical Characteristics (TA = 25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain current | IDSS | VDS=30V, VGS=0V | 1 | uA | ||
| Gate-body Leakage | IGSS | VDS=±20V, VDS=0V | ±100 | nA | ||
| Drain-Source On-Resistance (note 3) | RDS(ON) | VGS=10V, ID=5.8A | 23 | 30 | mΩ | |
| Drain-Source On-Resistance (note 3) | RDS(ON) | VGS=4.5V, ID=4.8A | 31 | 42 | mΩ | |
| Forward trans conductance | gfs | VDS=5V, ID=5.8A | 5 | S | ||
| Gate-Threshold voltage* | VGS(th) | VDS=VGS, ID=250uA | 1.0 | 1.4 | 3.0 | V |
| Dynamic characteristics (note 4,5) | ||||||
| Input capacitance | Ciss | VDS=15V, VGS=0V,f=1MHz | 820 | pF | ||
| Output capacitance | Coss | VDS=15V, VGS=0V,f=1MHz | 118 | pF | ||
| Reverse Transfer capacitance | Crss | VDS=15V, VGS=0V,f=1MHz | 85 | pF | ||
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | 1.5 | Ω | ||
| Switching characteristics (note 4,5) | ||||||
| Turn-on Time | td(on) | VGS=10V, RL=2.6Ω, VDS=15V, RGEN=3Ω | 6.5 | ns | ||
| Rise time | tr | VGS=10V, RL=2.6Ω, VDS=15V, RGEN=3Ω | 3.1 | ns | ||
| Turn-off Time | td(off) | VGS=10V, RL=2.6Ω, VDS=15V, RGEN=3Ω | 15.1 | ns | ||
| Fall time | tf | VGS=10V, RL=2.6Ω, VDS=15V, RGEN=3Ω | 2.7 | ns | ||
| Drain-source diode characteristics and maximum ratings | ||||||
| Diode forward voltage | VSD | IS=1A, VGS=0V | 1.0 | V | ||
For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.
2507091655_ChipNobo-DMN3404L-7-CN_C42419948.pdf
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