voltage controlled small signal switch ChipNobo 2N7002K-7-CN with ESD protection and low RDS ON in SOT 23 package

Key Attributes
Model Number: 2N7002K-7-CN
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
RDS(on):
3Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
40pF
Output Capacitance(Coss):
30pF
Mfr. Part #:
2N7002K-7-CN
Package:
SOT-23
Product Description

Product Overview

This is a voltage-controlled small signal switch designed with a high-density cell for low RDS(ON). It is rugged, reliable, and offers high saturation current capability with ESD protection. Ideal for use as a load switch in portable devices and in DC/DC converters.

Product Attributes

  • Package: SOT-23
  • Epoxy UL Flammability Rating: 94V-0
  • Mounting Position: Any

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified)
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 340 mA
Power Dissipation PD 350 mW
Junction Temperature Tj 150
Storage Temperature Tstg -50 +150
Thermal Resistance From Junction to Ambient RθJA 357 /W
Electrical Characteristics (TA = 25 unless otherwise specified)
Drain-Source Breakdown Voltage VDS VGS=0V, ID=250µA 60 V
Gate-Threshold voltage* Vth(GS) VDS=VGS, ID=1mA 1 1.3 2.5 V
Gate-body Leakage IGSS1 VDS=0V, VGS=±20V ±10 µA
IGSS VDS=0V, VGS=±10V ±200 nA
IGSS VDS=0V, VGS=±5V ±100 nA
Zero Gate Voltage Drain current IDSS VDS=48V, VGS=0V 1 µA
Drain-Source On-Resistance* RDS(ON) VGS=10V, ID=500mA 0.9 2.7 Ω
VGS=4.5V, ID=200mA 1.1 3.0 Ω
Diode Forward voltage VSD IS=300mA, VGS=0V 1.50 V
Input capacitance** Ciss VDS=10V, VGS=0V,f=1MHz 40 pF
Output capacitance** Coss 30 pF
Reverse Transfer capacitance** Crss 10 pF
SWITCHING TIME
Turn-on Time** td(on) VDD=50V, RL=250Ω, VGS=10V, RGS=50Ω, RG=50Ω 10 ns
Turn-off Time** td(off) 15 ns
Reverse recovery Time trr VGS=0V, IS=300mA, VR=25V, dIS/dt=-100A/µS 30 ns
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage BVGSO IGS=±1mA (Open Drain) ±21.5 ±32 V

Notes: * Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%. ** These parameters have on way to verify. Data 1/4 Typical characteristics 2/4

SOT-23 PACKAGE OUTLINE Plastic surface mounted package. Precautions: PCB Design Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs 3/4

NOTICE The information presented in this document is for reference only. Involving product optimization and productivity improvement, ChipNobo reserves the right to adjust product indicators and upgrade some technical parameters. ChipNobo is entitled to be exempted from liability for any delay or non-delivery of the information disclosure process that occurs. The product listed herein is designed to be used with residential and commercial equipment, and do not support sensitive items and specialized equipment in areas where sanctions do exist. ChipNobo Co., Ltd or anyone on its behalf, assumes no responsibility or liability for any damages resulting from improper use. For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance. 4/4


2507091655_ChipNobo-2N7002K-7-CN_C42419944.pdf

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