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quality Durable power switching MOSFET Chongqing Pingwei Tech 4N65TF featuring 100 percent avalanche testing factory
quality Durable power switching MOSFET Chongqing Pingwei Tech 4N65TF featuring 100 percent avalanche testing factory

Durable power switching MOSFET Chongqing Pingwei Tech 4N65TF featuring 100 percent avalanche testing

Key Attributes
Model Number: 4N65TF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.6Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
5.8pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
425pF@25V
Pd - Power Dissipation:
34W
Gate Charge(Qg):
14.5nC@325V
Mfr. Part #:
4N65TF
Package:
TO-220TF-3
Product Description

Product Overview

The 4N65TF is an N-channel MOSFET designed for efficient power switching applications. It offers a combination of high voltage capability (650V), a continuous drain current of 4A, and a low on-state resistance (RDS(ON) MAX=2.6@VGS=10V/2A). Key features include low gate charge, low Ciss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it suitable for various power electronics designs. This MOSFET is compliant with ROHS2.0 and REACH environmental standards.

Product Attributes

  • Customer Name: Foshan Electrical Lighting Co., Ltd.
  • Customer Part Number: 18X001040024
  • Product Name: MOSFET
  • Product Model: 4N65TF
  • Product Trademark: (Not specified)
  • Environmental Requirements: ROHS2.0, REACH
  • Version: V1.0
  • Manufacturer Address: Liangping Industrial Park, Liangping County, Chongqing, China
  • Manufacturer Website: http://www.perfectway.cn
  • Package Type: TO-220TF

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Features
4A,650V,RDS(ON)MAX=2.6@VGS=10V/2A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings (TC=25, unless otherwise noted)
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS -30 +30 V
Continuous Drain Current ID 4 A
Pulsed Drain Current (Note1) IDM 16 A
Single Pulse Avalanche Energy (Note 2) EAS 150 mJ
Reverse Diode dV/dt (Note 3) dv/dt 2.63 V/ns
Operating Junction and Storage Temperature Range TJ,TSTG -55 +150
Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds TL 260
Mounting Torque 6-32 or M3 screw 1.1 Nm
Thermal Characteristics
Maximum Junction-to-Case RthJC 3.47 /W
Maximum Power Dissipation TC=25 PD 34 W
Electrical Characteristics (Tc=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 650 - - V
Breakdown Temperature Coefficient BVDSS /TJ Reference to 25, ID=250uA - 0.67 - V/
Zero Gate Voltage Drain Current IDSS VDS=650V,VGS=0V - - 10 A
Gate-Body Leakage Current,Forward IGSSF VGS=30V,VDS=0V - - 100 nA
Gate-Body Leakage Current,Reverse IGSSR VGS=-30V,VDS=0V - - -100 nA
Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2 - 4 V
Drain-Source On-State Resistance RDS(on) VGS=10V,ID=2A - 2.1 2.6
Pulse width tp380s,2%
Dynamic Characteristics
Input Capacitance Ciss VDS=25V,VGS=0V, f=1.0MHZ - 425 - pF
Output Capacitance Coss - 55 - pF
Reverse Transfer Capacitance Crss - 5.8 - pF
Switching Characteristics
Turn-On Delay Time td(on) VDD=325V,ID=4A, RG=10 (Note3,4) - 10 - ns
Turn-On Rise Time tr - 11 - ns
Turn-Off Delay Time td(off) - 31 - ns
Turn-Off Fall Time tf - 16 - ns
Total Gate Charge Qg VDS=325V,ID=4A, VGS=10V(Note3,4) - 14.5 - nC
Gate-Source Charge Qgs - 3 - nC
Gate-Drain Charge Qgd - 6 - nC
Drain-Source Body Diode Characteristics and Maximum Ratings
Diode Forward Voltage VSD IS=4A,VGS=0V - - 1.5 V
Reverse Recovery Time trr VGS=0V,IS=4A,Tj=25 dIF/dt=100A/us(Note3) - 320 - ns
Reverse Recovery Charge Qrr Pulse width tp380s,2% - 2.0 - nC
Package Outline Dimensions
Package Dim Min Max
TO-220TF A .590(15.0) .650(16.5)
B .393(10.0) .414(10.5)
C .118(3.00) .138(3.50)
D .118(3.00) .146(3.70)
E .512(13.0) .551(14.0)
F .028(0.70) .035(0.90)
G .114(2.90) .138(3.50)
H .255(6.50) .280(7.10)
I .173(4.40) .197(5.00)
J .102(2.60) .110(2.80)
K .018(0.45) .026(0.65)
L .092(2.35) .109(2.75)
P .890(2.25) .113(2.85)

Notes:

  • 1. Repetitive Rating: pulse width limited by maximum junction temperature.
  • 2. VDD=50V, starling, L=18.8mH, Rg=25, IAS=4A, TJ=25.
  • 3. dI/dt=_A/us, starting TJ=25. Pulse width300us; duty cycle2%.
  • 4. Repetitive rating; pulse width limited by maximum junction temperature.

2410121700_Chongqing-Pingwei-Tech-4N65TF_C432621.pdf

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