Surface Mount P Channel Enhancement Mode Transistor CHENMKO ENTERPRISE CHM9407AJPT for Motor Control
Key Attributes
Model Number:
CHM9407AJPT
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.7A
RDS(on):
108mΩ@4.5V,3.1A
Operating Temperature -:
-55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds):
49pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
780pF@30V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
29nC@30V
Mfr. Part #:
CHM9407AJPT
Package:
SO-8
Product Description
Product Overview
The CHM9407AJPT is a P-Channel Enhancement Mode Field Effect Transistor from CHENMKO ENTERPRISE CO.,LTD. Designed with a super high-density cell structure for extremely low RDS(ON), this surface mount transistor offers high power and current handling capability. It is suitable for applications such as servo motor control, power MOSFET gate drivers, and other switching applications. This lead-free product is available in a small flat SO-8 package.
Product Attributes
- Brand: CHENMKO ENTERPRISE CO.,LTD
- Product Type: Surface Mount P-Channel Enhancement Mode Field Effect Transistor
- Package Type: SO-8
- Construction: P-Channel Enhancement
- Certifications: Lead free product is acquired
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA = 25C unless otherwise noted) | ||||||
| VDSS | Drain-Source Voltage | -60 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| ID | Maximum Drain Current - Continuous | -3.7 | A | |||
| ID | Maximum Drain Current - Pulsed | A | ||||
| PD | Maximum Power Dissipation | 2500 | mW | |||
| TJ | Operating Temperature Range | -55 | 150 | C | ||
| TSTG | Storage Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance, Junction-to-Ambient | (Note 3) | 50 | C/W | ||
| Electrical Characteristics (TA = 25C unless otherwise noted) | ||||||
| OFF CHARACTERISTICS | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = -250 A | -60 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -60 V, VGS = 0 V | -1 | A | ||
| IGSS | Gate-Body Leakage | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = -250 A | -1 | -3 | V | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V, ID=-3.7A | 88 | 130 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V, ID=-3.1A (Note 2) | 150 | m | ||
| g FS | Forward Transconductance | VDS = -5V, ID = -3.7A | 7 | S | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Ciss | Input Capacitance | VDS = -30V, VGS = 0V, f = 1.0 MHz | 780 | pF | ||
| Coss | Output Capacitance | VDS = -30V, VGS = 0V, f = 1.0 MHz | 170 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS = -30V, VGS = 0V, f = 1.0 MHz | 49 | pF | ||
| SWITCHING CHARACTERISTICS (VDD = -30V, ID = -3.7A, VGS = -10V, RGEN = 6 (Note 4)) | ||||||
| Qg | Total Gate Charge | 21 | nC | |||
| Qgs | Gate-Source Charge | 13 | nC | |||
| Qgd | Gate-Drain Charge | 9 | nC | |||
| ton | Turn-On Time | 22 | nS | |||
| tr | Rise Time | 48 | nS | |||
| toff | Turn-Off Time | 21 | nS | |||
| tf | Fall Time | 4.0 | nS | |||
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||||
| IS | Drain-Source Diode Forward Current | VGS = 0 V | -1.3 | A | ||
| VSD | Drain-Source Diode Forward Voltage | IS = -1.3A (Note 1, 2) | -1.2 | -3.0 | V | |
2411220052_CHENMKO-ENTERPRISE-CHM9407AJPT_C5182468.pdf
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