Printed circuit board diode ChipNobo MB10F-D-CN with 1000 volt maximum repetitive peak reverse voltage
Key Attributes
Model Number:
MB10F-D-CN
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
35A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1V@1.0A
Current - Rectified:
1A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
MB10F-D-CN
Package:
MBF
Product Description
Product Overview
The MB10F-D-CN is a rectifier diode designed for printed circuit board applications. It features a glass-passivated junction chip, low reverse leakage, and high forward surge current capability. This component is ideal for use in residential and commercial equipment, offering high temperature soldering guaranteed up to 260C for 10 seconds.
Product Attributes
- Brand: ChipNobo
- Model: MB10F-D-CN
- Flammability Classification: Underwriters Laboratory 94V-0
- Material: Molded plastic body with solder plated terminals
- Polarity: Polarity symbol marking on body
Technical Specifications
| Parameter | SYMBOLS | UNITS | Rating | Conditions |
|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | V | 1000 | |
| Maximum RMS voltage | VRMS | V | 700 | |
| Maximum DC blocking voltage | VDC | V | 1000 | |
| Maximum average forward rectified current at TL=100 C | I(AV) | A | 1.0 | Single phase half-wave 60Hz, resistive or inductive load |
| Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load | IFSM | A | 35.0 | |
| Maximum instantaneous forward voltage at 1.0A | VF | V | 1.0 | |
| Maximum DC reverse current at rated DC blocking voltage | IR | A | 0.0027 (0.078 grams) | TA =25 C |
| Maximum DC reverse current at rated DC blocking voltage | IR | A | 0.2 | TA=125 C |
| Operating junction and storage temperature range | TJ,TSTG | C | -55 to +150 | |
| Typical junction capacitance (Note 2) | CJ | pF | 18.0 | Measured at 1MHz and applied reverse voltage of 4.0V D.C. |
| Typical thermal resistance (Note 1) | RqJA | C/W | 76.0 | Mounted on glass epoxy PC board with 1.3*1.3mm solder pad |
| Weight | ounce (grams) | 0.0027 (0.078) | ||
| Rating for fusing (t=8.3ms, Ta=25 C) | It | As | 5.08 |
Note 1: Mounted on glass epoxy PC board with 1.3*1.3mm solder pad.
Note 2: Measured at 1MHz and applied reverse voltage of 4.0V D.C.
Soldering Profile: The device can be exposed to a maximum temperature of 260C for 10 seconds. Devices can be cleaned using standard industry methods and solvents.
Mechanical Data:
- Case: Molded plastic body
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Mounting Position: Any
Dimensions:
| Symbol | Unit (mm) | Unit (inch) |
|---|---|---|
| A | 1.7 | 0.067 |
| B | 4.40 | 0.173 |
| C | 1.25 | 0.049 |
| D | 0.319 | 0.012 |
| E | 6.30 | 0.248 |
| F | 8.10 | 0.319 |
Package Information:
| Package | Reel Size | QTY/Reel | Box Size | QTY/Box | Carton Size | QTY/Carton | Reel DIA. |
|---|---|---|---|---|---|---|---|
| MBF | 13' | 5 (Kpcs) | 338 (mm) | 10 (Kpcs) | 365*365*360 (mm) | 80 (Kpcs) | 330 (mm) |
Marking: MB10F
Website: http://www.chipnobo.com
2507091655_ChipNobo-MB10F-D-CN_C42459024.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
