fast switching diode ChipNobo BAS16XV2T1G-CN with 75 volt reverse voltage and dissipation

Key Attributes
Model Number: BAS16XV2T1G-CN
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
6ns
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAS16XV2T1G-CN
Package:
SOD-523
Product Description

Product Overview

This is a fast switching device with a switching speed of less than 6.0 nS and a reverse recovery time (TRR) of less than 6.0 nS. It features a maximum power dissipation of 150mW, high stability, high reliability, and low reverse leakage current. Designed for use in residential and commercial equipment, it is suitable for general applications.

Product Attributes

  • Brand: ChipNobo
  • Package: SOD-523 Small Outline Plastic Package
  • Polarity: Color band denotes cathode end
  • Mounting Position: Any

Technical Specifications

Parameter Symbol Value Unit Test Condition Min Max
Reverse Voltage VR 75 V
Power Dissipation Pd 150 mW (TA = 25)
Operating junction temperature Tj 150
Storage temperature range Ts -55-+150
Thermal Resistance from Junction to Ambient R JA 833 /W
Forward Continuous Current IF 200 mA
Non-repetitive Peak Forward Surge Current IFSM 2.0 A @tp=1us; TA=25
Reverse Breakdown Voltage BV 75 V IR=100uA
Reverse Leakage Current IR nA VR=25V 30
Reverse Leakage Current IR uA VR=75 1
Forward Voltage VF V IF=1.0mA 0.715
Forward Voltage VF V IF=10mA 0.855
Forward Voltage VF V IF=50mA 1.00
Forward Voltage VF V IF=150mA 1.25
Forward recovery voltage VFR V 1.75
Reverse Recovery Time TRR nS IF= IR=10mA RL=50 IRR=0.1 X IR 6
Diode Capacitance Cd pF VR=0V, f=1MHZ 2
Stored charge Qs pC IF= 10mA VR=5.0V RL=500 45

MARKING: A6


2507091655_ChipNobo-BAS16XV2T1G-CN_C45369240.pdf

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