ChipNobo BSS84LT1G CN transistor featuring low threshold voltage and ul 94v 0 epoxy in sot23 package
Key Attributes
Model Number:
BSS84LT1G-CN
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
RDS(on):
10Ω@5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
30pF
Pd - Power Dissipation:
225mW
Mfr. Part #:
BSS84LT1G-CN
Package:
SOT-23
Product Description
Product Overview
This product is a highly energy-efficient component featuring low threshold voltage and high-speed switching capabilities, making it suitable for DC/DC converter applications. It is housed in a compact SOT-23 package, designed for flexible mounting positions and constructed with UL 94V-0 rated epoxy for enhanced safety. The product is intended for use in residential and commercial equipment.
Product Attributes
- Package: SOT-23 Small Outline Plastic Package
- Epoxy Material: UL 94V-0 Flammability Rating
- Mounting Position: Any
- Brand: ChipNobo (implied from notice)
Technical Specifications
| Parameters | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified) | ||||||
| Drain-Source Voltage | VDS | -50 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -0.13 | A | |||
| Pulsed Drain Current (tp<10us) (note1) | IDM | -0.52 | A | |||
| Power Dissipation | PD | 225 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| Thermal Resistance From Junction to Ambient (note2) | θJA | 556 | /W | |||
| Maximum Lead Temperature for Soldering Purposes, Duration for 5 Seconds | TL | 260 | ||||
| Electrical Characteristics (TA = 25 unless otherwise specified) | ||||||
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250uA | -50 | V | ||
| Gate-Threshold voltage(note3) | VGS(th) | VDS=VGS, ID=-250uA | -0.9 | -1.6 | -2.0 | V |
| Gate-body Leakage | IGSS | VDS=0V, VGS=±20V | ±5 | uA | ||
| Zero Gate Voltage Drain current | IDSS | VDS=-50V, VGS=0V | -0.1 | uA | ||
| VDS=-25V, VGS=0V | 10 | uA | ||||
| Drain-Source On-Resistance (note3) | RDS(ON) | VGS=-5V, ID=-0.1A | 5.8 | 8 | Ω | |
| VGS=-10V, ID=-0.1A | 4.5 | Ω | ||||
| Forward transconductance (note1) | gfs | VDS=-25V, ID=-0.1A | 50 | mS | ||
| Diode forward voltage | VSD | IS=0.34A, VGS=0V | 1.3 | V | ||
| Dynamic (note4) | ||||||
| Input capacitance | Ciss | VDS=5V, VGS=0V, f=1MHz | 30 | pF | ||
| Output capacitance | Coss | 10 | pF | |||
| Reverse Transfer capacitance | Crss | 5 | pF | |||
| Switching (note3,4) | ||||||
| Turn-on Time | td(on) | VDD=-15V, RL=50Ω, ID≈-0.25A | 2.5 | ns | ||
| Rise time | tr | 1 | ns | |||
| Turn-off Time | td(off) | 16 | ns | |||
| Fall time | tf | 8 | ns | |||
| SOURCE-DRAIN DIODE CHARACTERISTICS | ||||||
| Continuous Current | IS | -0.13 | A | |||
| Pulsed Current | ISM | -0.52 | A | |||
| Diode forward Voltage (note 3) | VSD | IS=-0.13A, VGS=0V | -2.2 | V | ||
Notes:
1). Repetitive rating: Pulse width limited by junction temperature.
2). Surface mounted on FR4 board, t ≤10s
3).Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%.
4). Typical characteristics
For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.
2507091655_ChipNobo-BSS84LT1G-CN_C42419973.pdf
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