High current N channel MOSFET ChipNobo CD15RN06M with fast switching speed and low RDS on resistance

Key Attributes
Product Custom Attributes
Product Description

Product Overview

This N-channel MOSFET, identified by the device code CD15RN06M and marking 60N15, is designed for high-performance switching applications. It features fast switching speeds, low gate charge, and low on-resistance (RDS(on)), with typical values of 15m at 10V and 17m at 4.5V. The device is 100% tested for single pulse avalanche energy, ensuring reliability. It is packaged in a TO-252 (1:G 2:D 3:S) package and is suitable for DC-DC converters and load switching applications.

Product Attributes

  • Brand: ChipNobo
  • Device Code: CD15RN06M
  • Marking: 60N15
  • Package: TO-252

Technical Specifications

Absolute Maximum Ratings (Ta=25, unless otherwise noted)

Parameter Symbol Rating Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (TC=25) ID 45 A
Continuous Drain Current (TC=100) ID 53 A
Pulsed Drain Current IDM 180 A
Single Pulse Avalanche Energy EAS 121 mJ
Power Dissipation (TC=25) PD 40 W
Thermal Resistance Junction-to-Case RJC 3.1 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150

Electrical Characteristics (Ta=25, unless otherwise noted)

Parameter Symbol Conditions Min. Typ. Max. Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA - - - V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.8 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=15A - 15 19 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=10A - 17 23 m
Dynamic Characteristics
Input Capacitance Ciss VDS=30V , VGS=0V , f=1MHz - 2050 - pF
Output Capacitance Coss VDS=30V , VGS=0V , f=1MHz - 150 - pF
Reverse Transfer Capacitance Crss VDS=30V , VGS=0V , f=1MHz - 120 - pF
Total Gate Charge Qg VDS=30V , VGS=10V , ID=20A - 38 - nC
Gate-Source Charge Qgs VDS=30V , VGS=10V , ID=20A - 5.6 - nC
Gate-Drain Charge Qgd VDS=30V , VGS=10V , ID=20A - 10.4 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=30V, VGS=10V , RG=3, ID=20A - 7.8 - nS
Rise Time Tr VDD=30V, VGS=10V , RG=3, ID=20A - 47 - nS
Turn-Off Delay Time Td(off) VDD=30V, VGS=10V , RG=3, ID=20A - 29 - nS
Fall Time Tf VDD=30V, VGS=10V , RG=3, ID=20A - 31 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - - 45 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 20 - nS
Reverse Recovery Charge Qrr IS=20A, di/dt=100A/us, TJ=25 - 83 - nC

TO-252 Package Information

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

Order Information

Device Package Unit/Tape
CD15RN06M TO-252 2500 1/6

For additional information, please visit our website https://www.chipnobo.com/en or consult your nearest Chipnobo sales office for further assistance.


2512121540_ChipNobo-CD15RN06M_C52754124.pdf

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