Medium Power NPN Transistor DIODES MMBTA06-7-F in SOT23 Package Suitable for Amplification Switching
Key Attributes
Model Number:
MMBTA06-7-F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBTA06-7-F
Package:
SOT-23
Product Description
Product Overview
The MMBTA05 / MMBTA06 are NPN medium power transistors in a SOT23 package. They are ideal for low power amplification and switching applications. These devices feature epitaxial planar die construction and are complementary to PNP types MMBTA55 and MMBTA56. They are also available in AEC-Q101 qualified versions (MMBTA05Q/MMBTA06Q) suitable for automotive applications.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free ("Green" Device), AEC-Q101 qualified (for Q variants)
Technical Specifications
| Characteristic | Symbol | MMBTA05 | MMBTA06 | Unit | Test Condition | |
| Absolute Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | 60 | 80 | V | ||
| Collector-Emitter Voltage | VCEO | 60 | 80 | V | ||
| Emitter-Base Voltage | VEBO | 4.0 | V | |||
| Collector Current | IC | 500 | mA | |||
| Peak Collector Current | ICM | 1 | A | |||
| Thermal Characteristics | ||||||
| Power Dissipation | PD | 310 (Note 5) / 350 (Note 6) | mW | @TA = +25C, unless otherwise specified. | ||
| Thermal Resistance, Junction to Ambient | RJA | 403 (Note 5) / 357 (Note 6) | C/W | @TA = +25C, unless otherwise specified. | ||
| Thermal Resistance, Junction to Leads | RJL | 350 | C/W | @TA = +25C, unless otherwise specified. | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |||
| Electrical Characteristics | ||||||
| Collector-Base Breakdown Voltage | BVCBO | 60 | 80 | V | IC = 100A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | BVCEO | 60 | 80 | V | IC = 10.0mA, IB = 0 | |
| Emitter-Base Breakdown Voltage | BVEBO | 4.0 | V | IE = 100 A, IC = 0 | ||
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 60V, IE = 0 (MMBTA05) / VCB = 80V, IE = 0 (MMBTA06) | ||
| Collector Cutoff Current | ICES | 100 | nA | VCE = 60V, IBO = 0V (MMBTA05) / VCE = 80V, IBO = 0V (MMBTA06) | ||
| DC Current Gain | hFE | 100 | IC = 10mA, VCE = 1.0V / IC = 100mA, VCE = 1.0V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC = 100mA, IB = 10mA | ||
| Base-Emitter Turn-On Voltage | VBE(on) | 1.2 | V | IC = 100mA, VCE = 1.0V | ||
| Current Gain-Bandwidth Product | fT | 100 | MHz | VCE = 2.0V, IC = 10mA, f = 100MHz | ||
2412251004_DIODES-MMBTA06-7-F_C151597.pdf
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