NPN High Voltage Transistor DIODES FMMT458TA with 1A Peak Pulse Current and Matte Tin Plated Leads
Key Attributes
Model Number:
FMMT458TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
50MHz
Type:
NPN
Current - Collector(Ic):
225mA
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT458TA
Package:
SOT-23
Product Description
Product Overview
The FMMT458 is a 400V NPN High Voltage Transistor in a SOT23 package. It offers a high continuous collector current of 225mA, a peak pulse current of 1A, and 500mW power dissipation. This transistor exhibits excellent hFE characteristics up to 100mA and is available as a complementary PNP type (FMMT558). It is designed to be totally lead-free, fully RoHS compliant, and halogen and antimony-free, making it a "Green" device. An automotive-compliant version (FMMT458Q) is also available under a separate datasheet.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Package Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Rating: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
- Weight: 0.008 grams (Approximate)
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Automotive Compliant Part Available: FMMT458Q
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Voltage | VCBO | 400 | V | |
| Collector-Emitter Voltage | VCEO | 400 | V | |
| Emitter-Base Voltage | VEBO | 7 | V | |
| Continuous Collector Current | IC | 225 | mA | |
| Peak Pulse Current | ICM | 1 | A | |
| Base Current | IB | 200 | mA | |
| Power Dissipation | PD | 500 | mW | @TA = +25C (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 250 | C/W | @TA = +25C (Note 5) |
| Thermal Resistance, Junction to Lead | RJL | 197 | C/W | (Note 6) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Collector-Base Breakdown Voltage | BVCBO | 400 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | BVCEO | 400 | V | IC = 10mA (Note 8) |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 320V |
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 5.6V |
| Collector Emitter Cutoff Current | ICES | 100 | nA | VCE = 320V |
| Static Forward Current Transfer Ratio | hFE | 100 | IC = 1mA, VCE = 10V | |
| 150 | IC = 50mA, VCE = 10V | |||
| 100 | IC = 100mA, VCE = 10V (Note 8) | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 200 | mV | IC = 20mA, IB = 2mA (Note 8) |
| 500 | mV | IC = 50mA, IB = 6mA (Note 8) | ||
| Base-Emitter Turn-On Voltage | VBE(on) | 0.9 | V | IC = 50mA, VCE = 10V (Note 8) |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.9 | V | IC = 50mA, IB = 5mA (Note 8) |
| Output Capacitance | Cobo | 5 | pF | VCB = 20V, f = 1MHz |
| Transition Frequency | fT | 50 | MHz | VCE = 20V, IC = 10mA, f = 20MHz |
| Turn-On Time | ton | 135 | ns | VCE = 100V, IC = 50mA, IB1 = 5mA, IB2 = -10mA |
| Turn-Off Time | toff | 2260 | ns | VCE = 100V, IC = 50mA, IB1 = 5mA, IB2 = -10mA |
2412251000_DIODES-FMMT458TA_C116737.pdf
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