Low Saturation Voltage PNP Transistor DIODES FMMT720TA Featuring 40V BVCEO and 4A Peak Pulse Current
Key Attributes
Model Number:
FMMT720TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
806mW
Transition Frequency(fT):
180MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT720TA
Package:
SOT-23
Product Description
Product Overview
The FMMT720 is a 40V PNP Silicon Low Saturation Transistor designed for high-performance applications. It offers a continuous collector current of -1.5A and a peak pulse current of -4A, with a low saturation voltage (VCE(sat) < -220mV @ -1A) and a low equivalent on-resistance (RCE(SAT) = 163m). This device is characterized for high current gain hold-up up to -3A and is available in a SOT23 package. It is qualified to AEC-Q101 Standards for High Reliability and is PPAP capable.
Product Attributes
- Brand: Diodes Incorporated
- Product Line: Diodes Incorporated
- Package: SOT23
- Material: Molded plastic, "Green" molding compound
- Certifications: AEC-Q101 Standards, Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free. Green Device
- Compliance: PPAP capable
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Features | ||||
| BVCEO | BVCEO | > -40 | V | |
| IC Continuous Collector Current | IC | -1.5 | A | |
| ICM Peak Pulse Current | ICM | -4 | A | |
| Low Saturation Voltage | VCE(sat) | < -220 | mV | @ -1A |
| RCE(SAT) | RCE(SAT) | 163 | m | |
| Power Dissipation | PD | 625 | mW | (@TA = +25C, Note 6) |
| hFE characterised up to | -3 | A | for high current gain hold-up | |
| Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -40 | V | (@TA = +25C) |
| Collector-Emitter Voltage | VCEO | -40 | V | (@TA = +25C) |
| Emitter-Base Voltage | VEBO | -7 | V | (@TA = +25C) |
| Continuous Collector Current | IC | -1.5 | A | (@TA = +25C) |
| Peak Pulse Current | ICM | -4 | A | (@TA = +25C) |
| Base Current | IB | -500 | mA | (@TA = +25C) |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 625 | mW | (@TA = +25C, Note 6) |
| Power Dissipation | PD | 806 | mW | (@TA = +25C, Note 7) |
| Thermal Resistance, Junction to Ambient | RJA | 200 | C/W | (Note 6) |
| Thermal Resistance, Junction to Ambient | RJA | 155 | C/W | (Note 7) |
| Thermal Resistance, Junction to Leads | RJL | 194 | C/W | (Note 8) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -40 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCEO | -40 | V | IC = -10mA (Note 10) |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Collector Cutoff Current | ICBO | <1 | nA | VCB = -35V |
| Emitter Cutoff Current | IEBO | <1 | nA | VEB = -5.6V |
| Collector Emitter Cutoff Current | ICES | <1 | nA | VCE= -35V |
| Static Forward Current Transfer Ratio | hFE | 300 | - | IC = -10mA, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 300 | - | IC = -0.1A, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 180 | - | IC = -1A, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 60 | - | IC = -1.5A, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 12 | - | IC = -3A, VCE = -2V |
| Collector-Emitter Saturation Voltage | VCE(sat) | -26 | mV | IC =- 0.1A, IB = -10mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -150 | mV | IC = -1A, IB = -50mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -245 | mV | IC = -1.5A, IB = -100mA |
| Base-Emitter Turn-On Voltage | VBE(on) | -0.80 | V | IC = -1.5A, VCE = -2V (Note 10) |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.89 | V | IC = -1.5A, IB = -75mA (Note 10) |
| Output Capacitance | Cobo | 19 | pF | VCB = -10V, f = 1MHz |
| Transition Frequency | fT | 150 | MHz | VCE = -10V, IC = -50mA, f = 100MHz |
| Turn-On Time | ton | 40 | ns | VCC = -15V, IC = -0.75A, IB1 = IB2 = -15mA |
| Turn-Off Time | toff | 435 | ns | VCC = -15V, IC = -0.75A, IB1 = IB2 = -15mA |
1809081611_DIODES-FMMT720TA_C15332.pdf
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