100V NPN transistor DIODES ZXTN25100DFHTA with low saturation voltage and high gain in SOT23 package
Key Attributes
Model Number:
ZXTN25100DFHTA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
1.25W
Transition Frequency(fT):
175MHz
Type:
NPN
Current - Collector(Ic):
2.5A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
ZXTN25100DFHTA
Package:
SOT-23
Product Description
Product Overview
The ZXTN25100DFH is a 100V NPN low saturation transistor in a SOT23 package. It offers high gain, low saturation voltage (VCE(sat) < 95mV @ 1A), and an RCE(sat) of 80m. This device is suitable for various applications including DC-DC converters, DC fans, motor controls, and driving lamps, relays, and solenoids. It is designed with epitaxial planar die construction and is totally lead-free and RoHS compliant, making it a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Complementary PNP Part: ZXTP25100DFH
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Features | ||||
| BVCEO | BVCEO | > 100 | V | |
| Collector Current | IC | 2.5 | A | |
| Low Saturation Voltage | VCE(sat) | < 95 | mV | @ 1A |
| RCE(sat) | RCE(sat) | 80 | m | |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 180 | V | @TA = +25C, unless otherwise specified. |
| Collector-Emitter Voltage | VCEO | 100 | V | @TA = +25C, unless otherwise specified. |
| Emitter-Base Voltage | VEBO | 7 | V | @TA = +25C, unless otherwise specified. |
| Collector-Emitter Voltage (Forward Blocking) | VCEX | 180 | V | @TA = +25C, unless otherwise specified. |
| Emitter-Collector Voltage (Reverse Blocking) | VECO | 6 | V | @TA = +25C, unless otherwise specified. |
| Base Current | IB | 0.5 | A | @TA = +25C, unless otherwise specified. |
| Continuous Collector Current | IC | 2.5 | A | @TA = +25C, unless otherwise specified. |
| Peak Collector Current | ICM | 3 | A | @TA = +25C, unless otherwise specified. |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 0.73 | W | @TA = +25C, mounted on 15mm x 15mm FR4 PCB |
| Thermal Resistance, Junction to Ambient | RJA | 171 | C/W | @TA = +25C, mounted on 15mm x 15mm FR4 PCB |
| Thermal Resistance, Junction to Case | RJC | 13 | C/W | @TA = +25C, mounted on minimum recommended pad layout FR4 PCB |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 180 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | BVCEO | 100 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7.0 | V | IE = 100A |
| Collector Cutoff Current | ICBO | 1 | nA | VCB = 180V |
| Emitter Cutoff Current | IEBO | 1 | nA | VEB = 5.6V |
| DC Current Gain | hFE | 300 | IC = 10mA, VCE = 2V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 120 | mV | IC = 0.5A, IB = 10mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 910 | mV | IC = 2.5A, IB = 250mA |
| Output Capacitance | Cobo | 8.7 | pF | VCB = 10V, f = 1MHz |
| Transition Frequency | fT | 175 | MHz | VCE = 10V, IC = 100mA, f = 100MHz |
| Delay Time | td | 16.4 | ns | VCC = 10V, IC = 500mA, IB1 = -IB2 = 50mA (Pulsed) |
| Rise Time | tr | 115 | ns | VCC = 10V, IC = 500mA, IB1 = -IB2 = 50mA (Pulsed) |
| Storage Time | ts | 763 | ns | VCC = 10V, IC = 500mA, IB1 = -IB2 = 50mA (Pulsed) |
| Fall Time | tf | 158 | ns | VCC = 10V, IC = 500mA, IB1 = -IB2 = 50mA (Pulsed) |
2412251102_DIODES-ZXTN25100DFHTA_C461151.pdf
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